IPD60 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IPD60R450E6 Infineon Technologies AG	1	Power Field-Effect Transistor, 9.2A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R450E6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R3K3C6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R3K3C6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R1K5PFD7S Infineon Technologies AG	1	Power Field-Effect Transistor, 3.6A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R1K5PFD7S	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R650CEAUMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R650CEAUMA1	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPD60R460CEAUMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R460CEAUMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R600CPATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor	IPD60R600CPATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R600C6 Infineon Technologies AG	1	Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R600C6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R600C6BTMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R600C6BTMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R1K5CE Infineon	1	600V 1.2610V1.1A 49W TO-252-3 MOSFETs ROHS	IPD60R1K5CE	3D model available Symbol and footprint not available 1	1 Download Model
	IPD60R460CEATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R460CEATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R210CFD7 Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 600V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R210CFD7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R600E6BTMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R600E6BTMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R1K4C6BTMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R1K4C6BTMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R750E6 Infineon Technologies AG	1	Power Field-Effect Transistor, 5.7A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R750E6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R1K0PFD7S Infineon Technologies AG	1	Power Field-Effect Transistor, 4.7A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R1K0PFD7S	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPD60R380C6 Infineon Technologies AG	1	Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R380C6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R650CEBTMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R650CEBTMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60N10S4-12 Infineon Technologies AG	1	Power Field-Effect Transistor, 60A I(D), 100V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60N10S4-12	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R520C6 Infineon Technologies AG	1	Power Field-Effect Transistor, 8.1A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R520C6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R600E6 Infineon Technologies AG	1	Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R600E6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R170CFD7ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 14A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R170CFD7ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R450E6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R450E6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R385CPBTMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IPD60R385CPBTMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD60R180C7 Infineon Technologies AG	1	Power Field-Effect Transistor, 13A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD60R180C7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD600N25N3G Infineon Technologies AG	1	Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IPD600N25N3G	3D model not available Symbol and footprint not available 0	0 Build or Request
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