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NVMJS0D9N04CTAG
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1 | Power Field-Effect Transistor, 322A I(D), 40V, 0.0009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | NVMJS0D9N04CTAG |
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NVMJS1D0N04CTAG
onsemi
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1 | Power Field-Effect Transistor, 288A I(D), 40V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | NVMJS1D0N04CTAG |
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NVMJST1D6N04CTXG
onsemi
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1 | Single N-Channel Power MOSFET 40V, 319A, 1.65 mΩ on top Cool Package | NVMJST1D6N04CTXG |
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NVMJS1D7N06CTWG
onsemi
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1 | Small Footprint (5x6mm); Low RDS (ON); Low QG and Capacitance; LFPAK8 Package; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant | NVMJS1D7N06CTWG |
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NVMJS1D3N04CTWG
onsemi
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1 | Power Field-Effect Transistor, 235A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | NVMJS1D3N04CTWG |
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NVMJS1D0N04CTWG
onsemi
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1 | Power Field-Effect Transistor, 300A I(D), 40V, 0.00092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | NVMJS1D0N04CTWG |
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NVMJS1D4N06CLTWG
onsemi
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1 | Power Field-Effect Transistor, 220A I(D), 60V, 0.00237ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | NVMJS1D4N06CLTWG |
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NVMJS3D0N06CTWG
onsemi
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1 | Small Footprint (5x6mm); Low RDS (ON); Low QG and Capacitance; LFPAK8 Package; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant | NVMJS3D0N06CTWG |
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NVMJS1D5N04LCTAG
onsemi
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1 | Power Field-Effect Transistor, 185A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | NVMJS1D5N04LCTAG |
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NVMJST3D3N04CTXG
onsemi
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1 | Top Side Cooling; Small Footprint (5x7 mm); Low RDS(on); Low QG and Capacitance; Gull-wings leads for an improved BLR performance; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant | NVMJST3D3N04CTXG |
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