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DE2E3SA102MN3AY02F
Murata Electronics
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1 | 1000 pF ±20% 400VAC Ceramic Capacitor E Radial, Disc | Other | DE2E3SA102MN3AY02F |
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71V124SA10YG8
Renesas Electronics
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1 | The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Other | 71V124SA10YG8 |
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71V3556SA100BQGI8
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA100BQGI8 |
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DE2E3SA102MN2AT01F
Murata Electronics
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1 | 1000 pF ±20% 250VAC Ceramic Capacitor E Radial, Disc | Other | DE2E3SA102MN2AT01F |
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2SA1036KT146
ROHM Semiconductor
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1 | PNP Driver Transistor: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market. | Other | 2SA1036KT146 |
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7142SA100C
Renesas Electronics
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1 | The 7142 is a high-speed 2K x 8 Dual-Port Static RAM designed to be used as a "SLAVE" Dual-Port RAM together with the 7132 "MASTER" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available. | Ceramic Dual-In-Line Packages | 7142SA100C |
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71V3556SA100BGGI8
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA100BGGI8 |
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71V3556SA100BQGI
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA100BQGI |
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7130SA100CB
Renesas Electronics
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1 | The 7130 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 | Ceramic Dual-In-Line Packages | 7130SA100CB |
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71V2556SA100BGI8
Renesas Electronics
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1 | The 71V2556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2556 contains data I/O, address and control signal registers. It can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V2556SA100BGI8 |
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SIT8944BA-71-25SA100.000000
SiTime
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1 | 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator | Other | SIT8944BA-71-25SA100.000000 |
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SIT2044BI-S1-33SA10.000000
SiTime
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1 | 1 – 110 MHz, -55 to 125°C, SOT23, Endura™ Series Oscillator | Other | SIT2044BI-S1-33SA10.000000 |
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SIT8944BI-73-18SA100.000000
SiTime
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1 | 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator | Other | SIT8944BI-73-18SA100.000000 |
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SIT8944BIF32-33SA100.000000
SiTime
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1 | 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator | Other | SIT8944BIF32-33SA100.000000 |
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SA100A-TP
MCC
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1 | TVS | Diodes, Axial Diameter Horizontal Mounting | SA100A-TP |
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ACASA1002S1002P1AT
Vishay
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1 | Vishay ACAS Series 10kΩ ±0.25% Isolated SMT Resistor Array, 4 Resistors, 0.3W total 1206 Package Convex SMT | Other | ACASA1002S1002P1AT |
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KSA1015OTA_Q
onsemi
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1 | Bipolar Transistors - BJT | Other | KSA1015OTA_Q |
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SISA10DN-T1-GE3
Vishay
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1 | Vishay SISA10DN-T1-GE3 N-channel MOSFET Transistor, 30 A, 30 V, 8-Pin PowerPAK 1212 | Other | SISA10DN-T1-GE3 |
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ACASA1001E2001P100
Vishay
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Vishay ACAS Series 1 k |
Other | ACASA1001E2001P100 |
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ACASA1001S1002P100
Vishay
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1 | ACASA1001S1002P100 | Other | ACASA1001S1002P100 |
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2SA1036KT146Q/R
ROHM Semiconductor
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0 | Transistor, PNP, Driver, -32V, -500mA, ROHM 2SA1036KT146Q/R PNP Bipolar Transistor, 0.5 A, 32 V, 3-Pin SC-59 | SOT23 (3-Pin) | 2SA1036KT146Q/R |
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TPSA105M035R3000
Kyocera AVX
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1 | Tantalum Capacitors - Solid SMD 35V 1uF 20% 1206 ESR = 3000mOhm | Capacitor Moulded Polarised | TPSA105M035R3000 |
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2SA1037AKT146R
ROHM Semiconductor
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1 | ROHM - 2SA1037AKT146R - TRANSISTOR,PNP,50V,0.15A,SOT-346 | SOT23 (3-Pin) | 2SA1037AKT146R |
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DE2E3SA103MJ3BY02F
Murata Electronics
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1 | Safety Capacitors Lead Type Disc Ceramic Capacitors for Consumer Electronics & Industrial Equipment | Other | DE2E3SA103MJ3BY02F |
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IMSA-10112S-30Y900
IRISO USA Inc.
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1 | Vertical SMT Box Connector, 30 Position | Other | IMSA-10112S-30Y900 |
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