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Image Part Number D.S Description Package Category Prices / Stock Model Action
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71V35761SA183BQG Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BQG 1 Download Model
Part Image Part Image 1 Inductors for high frequency circuits, Multilayer ceramic Other MHQ0402PSA18NHT000 1 Download Model
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71V35761SA183BG Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BG 1 Download Model
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2SA1832 Toshiba
1 PNP Bipolar Transistor, -50 V, -0.15 A, SOT-416(SSM) Other 2SA1832 1 Download Model
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71V35761SA183BGI Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BGI 1 Download Model
Part Image Part Image 1 500WATTS TVS 5.0 to 170 VOLTS Diodes, Axial Diameter Horizontal Mounting SA18CA-TP 1 Download Model
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71V35761SA183BQG8 Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BQG8 1 Download Model
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71V35761SA183BGG Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BGG 1 Download Model
Part Image Part Image 1 29.2V Clamp 17.5A Ipp Tvs Diode Through Hole DO-15 Diodes, Axial Diameter Horizontal Mounting SA18CA-AP 1 Download Model
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71V35761SA183BGGI Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BGGI 1 Download Model
Part Image Part Image 1 FFC & FPC Connectors Other TF13BSA-18S-0.4SH(800) 1 Download Model
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SA18-11SEKWA Kingbright
1 SA18-11SEKWA Kingbright 7-Segment LED Display, CA Orange 610 mcd RH DP 44.5mm Dual-In-Line Sockets SA18-11SEKWA 1 Download Model
Part Image Part Image 1 Bipolar Transistors - BJT SOT23 (3-Pin) 2SA1832-GR,LF 1 Download Model
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71V35761SA183BGGI8 Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BGGI8 1 Download Model
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71V35761SA183BGI8 Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BGI8 1 Download Model
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SA18/TR8 Microsemi Corporation (now Microchip)
1 Trans Voltage Suppressor Diode, 500W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-41 SA18/TR8 0 Build or Request
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SA18/51 Vishay Semiconductors
1 Trans Voltage Suppressor Diode, 18V V(RWM), Unidirectional, DO-204AC SA18/51 0 Build or Request
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SA18/54 Vishay Semiconductors
1 Trans Voltage Suppressor Diode, 18V V(RWM), Unidirectional, DO-204AC SA18/54 0 Build or Request
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SA18/54 Vishay Intertechnologies
1 Trans Voltage Suppressor Diode, 500W, 18V V(RWM), Unidirectional, 1 Element, DO-204AC SA18/54 0 Build or Request
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SA18/73 Vishay Intertechnologies
1 Trans Voltage Suppressor Diode, 500W, 18V V(RWM), Unidirectional, 1 Element, DO-204AC SA18/73 0 Build or Request
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SA18/73 Vishay Semiconductors
1 Trans Voltage Suppressor Diode, 18V V(RWM), Unidirectional, DO-204AC SA18/73 0 Build or Request
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SA18/51 Vishay Intertechnologies
1 Trans Voltage Suppressor Diode, 500W, 18V V(RWM), Unidirectional, 1 Element, DO-204AC SA18/51 0 Build or Request
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SA18/TR12 Microsemi Corporation (now Microchip)
1 Trans Voltage Suppressor Diode, 500W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-41 SA18/TR12 0 Build or Request
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1812SA181KA13A Kyocera AVX Components
1 Ceramic Capacitor, Multilayer, Ceramic, 1500V, 10% +Tol, 10% -Tol, C0G, 30ppm/Cel TC, 0.00018uF, Surface Mount, 1812 1812SA181KA13A 0 Build or Request
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SV55SA182KAATR1 Kyocera AVX Components
1 Ceramic Capacitor, Multilayer, Ceramic, 1500V, 10% +Tol, 10% -Tol, C0G, -/+30ppm/Cel TC, 0.0018uF, 4720, SV55SA182KAATR1 0 Build or Request
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