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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	NX3225SA-20.000000MHZ-B2 NDK	1	Crystals	Other	NX3225SA-20.000000MHZ-B2	3D model available Symbol and footprint available 3	1 Download Model
	2SA2071P5T100Q ROHM Semiconductor	1	ROHM 2SA2071P5T100Q PNP Transistor, 3 A, -60 V, 3+Tab-Pin SOT-89	Other	2SA2071P5T100Q	3D model available Symbol and footprint available 3	1 Download Model
	ACASA2002U2002P1AT Vishay	1	Resistor Networks & Arrays 20K/20Kohm .1%/.05% 10/5ppm 0612 Auto	Other	ACASA2002U2002P1AT	3D model available Symbol and footprint available 3	1 Download Model
	CRASA20K0F2K00TA Vishay	1	Resistor Networks & Arrays 0612 20K/2Kohms 1% Square Corners	Other	CRASA20K0F2K00TA	3D model available Symbol and footprint available 3	1 Download Model

	FX30B-5P-3.81DSA20 Hirose	1	Hirose FunctionMAX FX30B, 3.81mm Pitch, 5 Way, 1 Row, Straight PCB Header, Through Hole	Other	FX30B-5P-3.81DSA20	3D model available Symbol and footprint available 3	1 Download Model
	71V016SA20PHG Renesas Electronics	1	The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Small Outline Packages	71V016SA20PHG	3D model available Symbol and footprint available 3	1 Download Model
	71V35761SA200BGG Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V35761SA200BGG	3D model available Symbol and footprint available 3	1 Download Model
	71256SA20YGI Renesas Electronics	1	The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Other	71256SA20YGI	3D model available Symbol and footprint available 3	1 Download Model
	71V016SA20PHGI Renesas Electronics	1	The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Small Outline Packages	71V016SA20PHGI	3D model available Symbol and footprint available 3	1 Download Model
	71V35761SA200BGI Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V35761SA200BGI	3D model available Symbol and footprint available 3	1 Download Model
	SA20A-TP MCC	1	TVS	Diodes, Axial Diameter Horizontal Mounting	SA20A-TP	3D model available Symbol and footprint available 3	1 Download Model
	ADCR-T02R7SA205MB ABRACON	1	CAP 2F 2.7V TH	Capacitor, Polarized Radial Diameter	ADCR-T02R7SA205MB	3D model available Symbol and footprint available 3	1 Download Model
	SA20CA-AP MCC	1	TVS	Diodes, Axial Diameter Horizontal Mounting	SA20CA-AP	3D model available Symbol and footprint available 3	1 Download Model
	71V35761SA200BQG Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V35761SA200BQG	3D model available Symbol and footprint available 3	1 Download Model
	RFSA2013TR7 Qorvo	1	50 - 6000 MHz, 5 V Voltage Controlled Attenuator	Quad Flat No-Lead	RFSA2013TR7	3D model available Symbol and footprint available 3	1 Download Model

	71421SA20PF Renesas Electronics	1	The 71421 is a high-speed 2K x 8 Dual-Port Static RAM with internal interrupt logic for interprocessor communications. It is designed to be used as a "SLAVE" Dual-Port RAM together with the 71321 "MASTER" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	71421SA20PF	3D model available Symbol and footprint available 3	1 Download Model
	6116SA20SOG8 Renesas Electronics	1	The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Small Outline Packages	6116SA20SOG8	3D model not available Symbol and footprint available 2	1 Download Model
	2SA2056(TE85L,F) Toshiba	1	Toshiba 2SA2056(TE85L,F) PNP Bipolar Transistor, 2 A, 50 V, 3-Pin TSM	Other	2SA2056(TE85L,F)	3D model available Symbol and footprint available 3	1 Download Model
	71421SA20J Renesas Electronics	1	The 71421 is a high-speed 2K x 8 Dual-Port Static RAM with internal interrupt logic for interprocessor communications. It is designed to be used as a "SLAVE" Dual-Port RAM together with the 71321 "MASTER" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode.	Plastic Leaded Chip Carrier	71421SA20J	3D model not available Symbol and footprint available 2	1 Download Model
	71342SA20J8 Renesas Electronics	1	The 71342 is a high-speed 4K x 8 Dual-Port Static RAM containing a fully independent semaphore logic block to assist in arbitrating between ports. This block contains unassigned flags which can be accessed by either side, however, only one side can control the flag at any time. An automatic power down feature, controlled by CE and SEM, permits the on-chip circuitry of each port to enter a very low standby power mode (both CE and SEM HIGH).	Plastic Leaded Chip Carrier	71342SA20J8	3D model not available Symbol and footprint available 2	1 Download Model
	71342SA20PF8 Renesas Electronics	1	The 71342 is a high-speed 4K x 8 Dual-Port Static RAM containing a fully independent semaphore logic block to assist in arbitrating between ports. This block contains unassigned flags which can be accessed by either side, however, only one side can control the flag at any time. An automatic power down feature, controlled by CE and SEM, permits the on-chip circuitry of each port to enter a very low standby power mode (both CE and SEM HIGH).	Quad Flat Packages	71342SA20PF8	3D model available Symbol and footprint available 3	1 Download Model
	6116SA20DB Renesas Electronics	1	The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Dual-In-Line Packages	6116SA20DB	3D model available Symbol and footprint available 3	1 Download Model
	6116SA20SOG Renesas Electronics	1	The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Small Outline Packages	6116SA20SOG	3D model not available Symbol and footprint available 2	1 Download Model
	NSV2SA2029M3T5G onsemi	1	Reduces Board Space	Other	NSV2SA2029M3T5G	3D model available Symbol and footprint available 3	1 Download Model
	2SA2070(TE12L,F) Toshiba	1	Bipolar Transistors - BJT PWR TRANS PW-MINI V=50	Other	2SA2070(TE12L,F)	3D model available Symbol and footprint available 3	1 Download Model
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