SA20. Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	2SA2088U3T106 ROHM Semiconductor	1	ROHM 2SA2088U3T106 PNP Transistor, 500 mA, -60 V, 3-Pin SOT-323	SOT23 (3-Pin)	2SA2088U3T106	3D model available Symbol and footprint available 3	1 Download Model
	DSA200100L Panasonic	1	DSA200100L, PNP Bipolar Transistor, -100 mA -50 V HFE:210 150 MHz, 3-Pin Mini3 G3 B	SOT23 (3-Pin)	DSA200100L	3D model available Symbol and footprint available 3	1 Download Model
	HSA2-040SIA/A2S23 Microchip	0	32 KB Flash 2048 RAM FS-USB 2.0 12-bit ADC	Small Outline Packages	HSA2-040SIA/A2S23	3D model available Symbol and footprint available 3	1 Download Model
	MPSA20 PBFREE Central Semiconductor	1	Bipolar Transistors - BJT NPN Gen Pur SS	Other	MPSA20 PBFREE	3D model available Symbol and footprint available 3	1 Download Model

	ADCR-S02R7SA206MB ABRACON	1	CAP 20F 2.7V TH	Capacitor, Polarized Radial Diameter	ADCR-S02R7SA206MB	3D model available Symbol and footprint available Manufacturer Approved Model 3	1 Download Model
	ADCR-E02R7SA205MB ABRACON	1	CAP 2F 2.7V TH	Capacitor, Polarized Radial Diameter	ADCR-E02R7SA205MB	3D model available Symbol and footprint available Manufacturer Approved Model 3	1 Download Model
	FX30B-3P-7.62DSA20 Hirose	1	Hirose FunctionMAX FX30B Series, 7.62mm Pitch 3 Way 2 Row Straight PCB Header, Solder Termination	Other	FX30B-3P-7.62DSA20	3D model available Symbol and footprint available 3	1 Download Model
	71V256SA20PZG Renesas Electronics	1	The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71V256SA20PZG	3D model available Symbol and footprint available 3	1 Download Model
	RFSA2023SQ Qorvo	1	50 - 6000 MHz, 3.3 V Voltage Controlled Attenuator	Quad Flat No-Lead	RFSA2023SQ	3D model available Symbol and footprint available 3	1 Download Model
	71V35761SA200BGG8 Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V35761SA200BGG8	3D model available Symbol and footprint available 3	1 Download Model
	RFSA2033SQ Qorvo	1	50 - 6000 MHz, 3 - 5 V Low Loss Voltage Controlled Attenuator	Quad Flat No-Lead	RFSA2033SQ	3D model available Symbol and footprint available 3	1 Download Model
	7140SA20J Renesas Electronics	1	The 7140 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a "SLAVE" Dual-Port RAM together with the 7130 "MASTER" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available.	Plastic Leaded Chip Carrier	7140SA20J	3D model not available Symbol and footprint available 2	1 Download Model
	71V016SA20YGI Renesas Electronics	1	The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Other	71V016SA20YGI	3D model available Symbol and footprint available 3	1 Download Model
	71V35761SA200BG Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V35761SA200BG	3D model available Symbol and footprint available 3	1 Download Model
	2SA2094TL ROHM Semiconductor	1	PNP High speed switching Transistor: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.	SOT23 (3-Pin)	2SA2094TL	3D model available Symbol and footprint available 3	1 Download Model

	SF-1206SA2000R-2 Bourns	1	1206 slow-blow met-foil. 20A Auto	Other	SF-1206SA2000R-2	3D model not available Symbol and footprint available 2	1 Download Model
	RFSA2013SB Qorvo	1	50 - 6000 MHz, 5 V Voltage Controlled Attenuator	Quad Flat No-Lead	RFSA2013SB	3D model available Symbol and footprint available 3	1 Download Model
	SF-0603SA200M-2 Bourns	1	Automotive Grade Slow Blow SMD Fuses	Fuses Chip	SF-0603SA200M-2	3D model available Symbol and footprint available 3	1 Download Model
	2SA2029FHAT2LQ ROHM Semiconductor	1	PNP, SOT-723, -50V -150mA, General Purpose Amplification Transistor for Automotive	Other	2SA2029FHAT2LQ	3D model available Symbol and footprint available 3	1 Download Model
	7130SA20J8 Renesas Electronics	1	The 7130 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535	Plastic Leaded Chip Carrier	7130SA20J8	3D model not available Symbol and footprint available 2	1 Download Model
	71256SA20PZG8 Renesas Electronics	1	The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Other	71256SA20PZG8	3D model available Symbol and footprint available 3	1 Download Model
	71321SA20J8 Renesas Electronics	1	The 71321 is a high-speed 2K x 8 Dual-Port Static RAM with internal interrupt logic for interprocessor communications. It is designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 71421 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low sta	Plastic Leaded Chip Carrier	71321SA20J8	3D model not available Symbol and footprint available 2	1 Download Model
	SIT8944BE-11-18SA2.000000 SiTime	1	1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator	Other	SIT8944BE-11-18SA2.000000	3D model available Symbol and footprint available 3	1 Download Model
	71V3558SA200BQG Renesas Electronics	1	The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers.	BGA	71V3558SA200BQG	3D model available Symbol and footprint available 3	1 Download Model
	71V35761SA200BGGI Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V35761SA200BGGI	3D model available Symbol and footprint available 3	1 Download Model
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