2SA-1 Model Download Search Results
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2SA1941-O(Q)
Toshiba
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1 | Tr.,PNP,140V/10A,hfe=80to160,TO-3P(N) | Transistor Outline, Vertical | 2SA1941-O(Q) |
3
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2SA1037AKT146Q/R
ROHM Semiconductor
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1 | Transistor,PNP,general,-50V,-150mA,SMT3 | SOT23 (3-Pin) | 2SA1037AKT146Q/R |
3
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2SA1313-Y(TE85L,F)
Toshiba
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1 | SMALL SIGNAL BIPOLAR TRANSISTOR, 0.5A I(C), 50V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-236 | Other | 2SA1313-Y(TE85L,F) |
3
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2SA1358
Toshiba
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1 | Transistor: PNP; bipolar; 120V; 1A; 10W; TO126 | Transistor Outline, Vertical | 2SA1358 |
3
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2SA1941
Toshiba
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1 | Bipolar Transistors - BJT PNP VCEO -140V 70-W DC -10A 100W | Transistor Outline, Vertical | 2SA1941 |
3
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2SA1162-Y(TE85L,F)
Toshiba
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1 | Toshiba 2SA1162-Y(TE85L,F) PNP Bipolar Transistor, 150 mA, 50 V, 3-Pin SOT-346 | Other | 2SA1162-Y(TE85L,F) |
3
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2SA1943N(S1,E,S)
Toshiba
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1 | Bip Tr.,PNP,-230V/-15A,TO-3P(N) Toshiba 2SA1943N(S1,E,S) PNP Bipolar Transistor, 15 A, 230 V, 3-Pin TO-3P | Transistor Outline, Vertical | 2SA1943N(S1,E,S) |
3
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2SA1873
Toshiba
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1 | Bipolar Transistors - BJT -150mA -50V | Other | 2SA1873 |
3
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2SA1943
onsemi
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1 | ON Semiconductor PNP/15A/230V TO-264 150W | Transistor Outline, Vertical | 2SA1943 |
3
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2SA1186
SANKEN ELECTRIC CO.
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1 | VCEO = −150 V, IC = −10 A Silicon PNP Epitaxial Planar Transistor | Transistor Outline, Vertical | 2SA1186 |
3
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2SA1244-Y(T6L1,NQ)
Toshiba
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1 | Bipolar Transistors - BJT PB-F POWER TRANSISTOR | Other | 2SA1244-Y(T6L1,NQ) |
2
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2SA1162-Y(F)
Toshiba
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1 | Transistor Toshiba 2SA1162-Y(F) PNP Bipolar Transistor, 0.15 A, 50 V, 3-Pin SC-59 | SOT23 (3-Pin) | 2SA1162-Y(F) |
3
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2SA1576U3HZGT106Q
ROHM Semiconductor
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1 | 1)Excellent hFE linearity.2)Complements the 2SC4081U3 HZG. | SOT23 (3-Pin) | 2SA1576U3HZGT106Q |
3
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2SA1757
ISC
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1 | isc Silicon PNP Power Transistor, V(BR)CEO -60V, V(BR)EBO -5V, V(BR)CBO -100V, ICBO -10μA | Other | 2SA1757 |
3
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TX2SA-12V-TH-X
Panasonic
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1 | 7.5 A inrush current possible, 2 Form C small size relays | Other | TX2SA-12V-TH-X |
3
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2SA1942
Toshiba
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1 | PNP Bipolar Transistor, -160 V, -12 A, TO-3P(L) | Transistor Outline, Vertical | 2SA1942 |
3
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TXD2SA-12V-Z
Panasonic
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1 | 6,000 V surge withstand voltage, 2 Form C and 2 A high dielectric strength relays | Other | TXD2SA-12V-Z |
3
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S2SA1774G
onsemi
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1 | Low VCE(sat), < 0.5 V; High hFE, 210-460 (typical); Available in 8 mm, 7-inch/3000 Unit Tape and Reel; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable | SOT23 (3-Pin) | S2SA1774G |
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TX2SA-12V-TH-Z
Panasonic
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1 | 7.5 A inrush current possible, 2 Form C small size relays | Other | TX2SA-12V-TH-Z |
3
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2SA1010-AZ
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products.The 2SA1010 is a mold power transistor developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. | Transistor Outline, Vertical | 2SA1010-AZ |
3
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TX2SA-12V-Z
Panasonic
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1 | 2,000 Vrms dielectric strength, 2 Form C and 2 A relays | Other | TX2SA-12V-Z |
3
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7142SA100J8
Renesas Electronics
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1 | The 7142 is a high-speed 2K x 8 Dual-Port Static RAM designed to be used as a "SLAVE" Dual-Port RAM together with the 7132 "MASTER" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available. | Plastic Leaded Chip Carrier | 7142SA100J8 |
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2SA1986
Toshiba
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1 | • High breakdown voltage: VCEO = −230 V (min)• Complementary to 2SC5358• Recommended for 80-W high-fidelity audio frequency amplifieroutput stag | Other | 2SA1986 |
3
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2SA1615-Z-E1-AZ
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products.The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. | Other | 2SA1615-Z-E1-AZ |
3
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2SA1987
Toshiba
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1 | • High breakdown voltage: VCEO = −230 V (min)• Complementary to 2SC5359• Recommended for 100-W high-fidelity audio frequency amplifieroutput stage. | Transistor Outline, Vertical | 2SA1987 |
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