MJD45 Model Download Search Results
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MJD45H11-001
onsemi
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1 | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin | MJD45H11-001 |
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MJD45H11-001G
onsemi
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1 | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin | MJD45H11-001G |
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MJD45H11T4
Freescale Semiconductor
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1 | TRANSISTOR,BJT,PNP,80V V(BR)CEO,8A I(C),TO-252AA | MJD45H11T4 |
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NJVMJD45H11D3T4G
onsemi
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1 | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin | NJVMJD45H11D3T4G |
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GSMJD45H11
Suzhou Good-Ark Electronics Co Ltd
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1 | Power Bipolar Transistor | GSMJD45H11 |
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NJVMJD45H11RLG-VF01
onsemi
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1 | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin | NJVMJD45H11RLG-VF01 |
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NJVMJD45H11G
onsemi
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1 | Complementary Pairs Simplifies Designs; Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes; Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix); Electrically Similar to Popular D44H/D45H Series; Fast Switching Speeds; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 | NJVMJD45H11G |
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NJVMJD45H11RLG
onsemi
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1 | Complementary Pairs Simplifies Designs; Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes; Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix); Electrically Similar to Popular D44H/D45H Series; Fast Switching Speeds; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 | NJVMJD45H11RLG |
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934660547118
Nexperia
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1 | Power Bipolar Transistor | 934660547118 |
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