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RFSA2033SQ
Qorvo
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1 | 50 - 6000 MHz, 3 - 5 V Low Loss Voltage Controlled Attenuator | Quad Flat No-Lead | RFSA2033SQ |
3
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71V256SA20PZG8
Renesas Electronics
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1 | The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Other | 71V256SA20PZG8 |
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2SA2065
Toshiba
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1 | PNP Bipolar Transistor, -20 V, -1.5 A, TSM | Other | 2SA2065 |
3
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7133SA20PF8
Renesas Electronics
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1 | The 7133 high-speed 2K x 16 Dual-Port Static RAMs is designed to be used as a stand-alone 16-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7143 "SLAVE" Dual-Port in 32-bit-or-more word width systems. Low-power (LA) versions offer battery backup data retention capability, with each port typically consuming 200μW for a 2V battery. Military grade product in compliance with MIL-PRF-38535 QML is available. | Quad Flat Packages | 7133SA20PF8 |
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71V35761SA200BGGI
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA200BGGI |
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7130SA20J8
Renesas Electronics
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1 | The 7130 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 | Plastic Leaded Chip Carrier | 7130SA20J8 |
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MHR0624SA207F70
Murata Electronics
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1 | Resistance : 200.0MΩ,Tolerance : ±1%,Single use,Rated power : 1.6W, Max. operating voltage : 10.00kVdc | Other | MHR0624SA207F70 |
3
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MHR0424SA207F70
Murata Electronics
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1 | Resistance : 200.0MΩ,Tolerance : ±1%,Single use,Rated power : 1.4W, Max. operating voltage : 10.00kVdc | Other | MHR0424SA207F70 |
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6116SA20TPGI
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116SA20TPGI |
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ADCR-E02R7SA205MB
ABRACON
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1 | CAP 2F 2.7V TH | Capacitor, Polarized Radial Diameter | ADCR-E02R7SA205MB |
3
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MHR0309SA207F70
Murata Electronics
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1 | Resistance : 200.0MΩ,Tolerance : ±1%,Single use,Rated power : 0.5W, Max. operating voltage : 3.50kVdc | Other | MHR0309SA207F70 |
3
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2SA2016-TP
MCC
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1 | 313General PurposeTransistor | Other | 2SA2016-TP |
3
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2SA2029M3T5G
onsemi
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1 | Reduces Board Space | Other | 2SA2029M3T5G |
3
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SIT9045AM-23-33S-A20.000000
SiTime
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1 | AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator | Other | SIT9045AM-23-33S-A20.000000 |
3
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71256SA20PZGI8
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71256SA20PZGI8 |
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MHR0317SA205F70
Murata Electronics
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1 | Resistance : 2.0MΩ,Tolerance : ±1%,Single use,Rated power : 0.8W, Max. operating voltage : 1.26kVdc | Other | MHR0317SA205F70 |
3
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MHR0317SA206F70
Murata Electronics
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1 | Resistance : 20.0MΩ,Tolerance : ±1%,Single use,Rated power : 0.8W, Max. operating voltage : 4.00kVdc | Other | MHR0317SA206F70 |
3
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RTBSA20M-TP
MCC
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1 | 2 Amp Fast Recovery Bridge Rectifiers 1000 Volts1.3 V,200μA,-55 150 °C | Other | RTBSA20M-TP |
3
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ASA-20.000MHZ-L-T
ABRACON
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1 | XTAL OSC XO 20.0000MHZ HCMOS SMD | Other | ASA-20.000MHZ-L-T |
3
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2SA2097(TE16L1,NQ)
Toshiba
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1 | Pb-F POWER TRANSISTOR; PW-MOLD; MOQ=2000; PC=1W; F=100KHZ | Other | 2SA2097(TE16L1,NQ) |
2
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MHR0422SA205F70
Murata Electronics
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1 | Resistance : 2.0MΩ,Tolerance : ±1%,Single use,Rated power : 1.3W, Max. operating voltage : 1.61kVdc | Other | MHR0422SA205F70 |
3
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SIT8944BIT73-18SA2.000000
SiTime
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1 | 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator | Other | SIT8944BIT73-18SA2.000000 |
3
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MHR0424SA205F70
Murata Electronics
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1 | High Voltage Resistor, 2.0MΩ, Single use, 1.4W, 1.7kVdc | Other | MHR0424SA205F70 |
3
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RFSA2033TR7
Qorvo
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1 | 50 - 6000 MHz, 3 - 5 V Low Loss Voltage Controlled Attenuator | Quad Flat No-Lead | RFSA2033TR7 |
3
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7132SA20J
Renesas Electronics
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1 | The 7132 is a high-speed 2K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7142 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 | Plastic Leaded Chip Carrier | 7132SA20J |
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