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0 | Inductors for power circuits, Wound ferrite, Automotive | Other | SLF10145T-331MR54-D |
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70T3319S133BCI
Renesas Electronics
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1 | The 70T3319 is a high-speed 256K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3319 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3319S133BCI |
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1 | SMD / SMT Inductors (Coils), L=330?H, L x W x T : | Other | CLF10060NIT-331M-D |
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ASPI0804T331M
ABRACON
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1 | 330 µH Unshielded Drum Core, Wirewound Inductor 600 mA 1.02Ohm Max Nonstandard | Other | ASPI0804T331M |
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ASPI-1306T-331M
ABRACON
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1 | Inductor Power Unshielded Wirewound 220uH 20% 100KHz 1.2A 0.38Ohm DCR T/R | Other | ASPI-1306T-331M |
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70T3319S133BC
Renesas Electronics
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1 | The 70T3319 is a high-speed 256K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3319 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3319S133BC |
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1 | TDK Shielded Wire-wound SMD Inductor 330 μH ±20% Wire-Wound 800mA Idc | Other | VLF10045T-331MR70 |
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CLF12555T-331M
TDK
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1 | TDK CLF12555 Series Shielded Wire-wound SMD Inductor with a Ferrite Core, 330 μH ±20% 1.2A Idc | Other | CLF12555T-331M |
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1 | TDK Type 1812 Wire-wound SMD Inductor 330 μH ±10% Wire-Wound 90mA Idc Q:20 | Inductor Moulded | NLC453232T-331K-PF |
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PXF40-48T3312
TDK Lambda
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1 | DC-DC Converters, Power module type, Triple Output, Output: 40W, 3.3V, ?12V, Isolated type | Other | PXF40-48T3312 |
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70T3319S133BFI
Renesas Electronics
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1 | The 70T3319 is a high-speed 256K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3319 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3319S133BFI |
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CLF7045T-331M-D
TDK
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1 | TDK CLF7045 D Series Shielded Wire-wound SMD Inductor with a Ferrite Core, 330 μH ±20% 490mA Idc | Other | CLF7045T-331M-D |
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70T3319S133BFGI
Renesas Electronics
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1 | The 70T3319 is a high-speed 256K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3319 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3319S133BFGI |
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SIT8944BMT33-18SA37.000000
SiTime
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1 | 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator | Other | SIT8944BMT33-18SA37.000000 |
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CLF7045T-331M
TDK
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1 | TDK CLF7045T Series Shielded Wire-wound SMD Inductor with a Ferrite Core, 330 μH ±20% 0.49A Idc | Other | CLF7045T-331M |
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PT331C
Everlight
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1 | .Protruded resin under flange 1.5 mm Ma | Other | PT331C |
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C0402T331K5GACM1107533
Yageo Group
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT 330.PF 50.0V | Capacitor Chip Non-polarised | C0402T331K5GACM1107533 |
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VZT331M1CTR-0607
Lelon
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1 | VZT Series 16 V 330 uF 105°C 6.3 x 7.7 mm SMT Aluminum Electrolytic Capacitor | Capacitor Al Electrolytic | VZT331M1CTR-0607 |
3
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MCP8021T-3315H/9PX
Microchip
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1 | 3-PHASE BRUSHLESS DC MOTOR GATEMultiphase Motor Driver NMOS PWM 28-VQFN (5x5) | Quad Flat No-Lead | MCP8021T-3315H/9PX |
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ASPI-0804T-331M-T
ABRACON
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1 | 330 µH Unshielded Drum Core, Wirewound Inductor 600 mA 1.02Ohm Max Nonstandard | Other | ASPI-0804T-331M-T |
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1 | Inductors for power circuits, Wound ferrite, Automotive | Other | SLF10145T-331MR54-PF |
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70T3319S133BC8
Renesas Electronics
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1 | The 70T3319 is a high-speed 256K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3319 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3319S133BC8 |
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ASPI-0804T-331M
ABRACON
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1 | 330 µH Unshielded Drum Core, Wirewound Inductor 600 mA 1.02Ohm Max Nonstandard | Other | ASPI-0804T-331M |
3
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70T3319S133BFI8
Renesas Electronics
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1 | The 70T3319 is a high-speed 256K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3319 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3319S133BFI8 |
3
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0 | Inductors for power circuits, Wound ferrite, Automotive | Other | SLF10145T-331MR54-C |
3
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