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W631GG6NB11I TR
Winbond
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1 | DRAM 1Gb DDR3 SDRAM, x16, Industrial Temp. 933MHz T&R | BGA | W631GG6NB11I TR |
3
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W631GG8MB15A
Winbond
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1 | SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 20 ns 78-VFBGA (10.5x8) | BGA | W631GG8MB15A |
3
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W631GU8RB12K
Winbond
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1 | 1Gb DDR3 SDRAM 1600MHz VFBGA96 | BGA | W631GU8RB12K |
3
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W631GG6NB09K
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V\r\n⚫ Double Data Rate architecture: two data transfers per clock cycle\r\n⚫ Eight internal banks for concurrent operation\r\n⚫ 8 bit prefetch architecture\r\n⚫ CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14\r\n⚫ Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)\r\n⚫ Programmable read burst ordering: interleaved or nibble sequential\r\n⚫ Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received wit | BGA | W631GG6NB09K |
3
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W631GU8RB11I
Winbond
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1 | Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V\r\n⚫ Backward compatible to VDD, VDDQ = 1.5V ± 0.075V\r\n⚫ Double Data Rate architecture: two data transfers per clock cycle\r\n⚫ Eight internal banks for concurrent operation\r\n⚫ 8 bit prefetch architecture\r\n⚫ CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14\r\n⚫ Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)\r\n⚫ Programmable read burst ordering: interleaved or nibble sequential\r\n⚫ Bi-directional, dif | BGA | W631GU8RB11I |
3
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W631GU6NB12S
Winbond
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1 | 1Gb DDR3 SDRAM 1600MHz VFBGA96 | BGA | W631GU6NB12S |
3
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W631GG6MB11A
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V\r\n Double Data Rate architecture: two data transfers per clock cycle\r\n Eight internal banks for concurrent operation\r\n 8 bit prefetch architecture\r\n CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14\r\n Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)\r\n Programmable read burst ordering: interleaved or nibble sequential\r\n Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received wit | BGA | W631GG6MB11A |
3
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W631GG6MB11S
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V\r\n Double Data Rate architecture: two data transfers per clock cycle\r\n Eight internal banks for concurrent operation\r\n 8 bit prefetch architecture\r\n CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14\r\n Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)\r\n Programmable read burst ordering: interleaved or nibble sequential\r\n Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG6MB11S |
3
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W631GG8MB09A
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V\r\n Double Data Rate architecture: two data transfers per clock cycle\r\n Eight internal banks for concurrent operation\r\n 8 bit prefetch architecture\r\n CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14\r\n Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)\r\n Programmable read burst ordering: interleaved or nibble sequential\r\n Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG8MB09A |
3
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W631GU8NB12A
Winbond
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1 | DDR3 SDRAM 1600MHz | BGA | W631GU8NB12A |
3
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W631GG8MB12A
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V\r\n Double Data Rate architecture: two data transfers per clock cycle\r\n Eight internal banks for concurrent operation\r\n 8 bit prefetch architecture\r\n CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14\r\n Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)\r\n Programmable read burst ordering: interleaved or nibble sequential\r\n Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received wit | BGA | W631GG8MB12A |
3
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W631GU8RB09I
Winbond
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1 | Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V\r\n⚫ Backward compatible to VDD, VDDQ = 1.5V ± 0.075V\r\n⚫ Double Data Rate architecture: two data transfers per clock cycle\r\n⚫ Eight internal banks for concurrent operation\r\n⚫ 8 bit prefetch architecture\r\n⚫ CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14\r\n⚫ Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)\r\n⚫ Programmable read burst ordering: interleaved or nibble sequential\r\n⚫ Bi-directional, dif | BGA | W631GU8RB09I |
3
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W631GG8MB15W
Winbond
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1 | SDRAM - DDR3 Memory IC 1Gbit Parallel 667 MHz 20 ns 78-VFBGA (10.5x8) | BGA | W631GG8MB15W |
3
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W631GU8RB-12
Winbond
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1 | 1Gb DDR3 SDRAM 1600MHz VFBGA78 | BGA | W631GU8RB-12 |
3
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W631GU6RB11I
Winbond
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1 | 1Gb DDR3 SDRAM 1866MHz VFBGA96 | BGA | W631GU6RB11I |
3
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W631GU8RB11J
Winbond
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1 | Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V\r\n⚫ Backward compatible to VDD, VDDQ = 1.5V ± 0.075V\r\n⚫ Double Data Rate architecture: two data transfers per clock cycle\r\n⚫ Eight internal banks for concurrent operation\r\n⚫ 8 bit prefetch architecture\r\n⚫ CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14\r\n⚫ Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)\r\n⚫ Programmable read burst ordering: interleaved or nibble sequential\r\n⚫ Bi-directional, dif | BGA | W631GU8RB11J |
3
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W631GG8MB12S
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V\r\n Double Data Rate architecture: two data transfers per clock cycle\r\n Eight internal banks for concurrent operation\r\n 8 bit prefetch architecture\r\n CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14\r\n Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)\r\n Programmable read burst ordering: interleaved or nibble sequential\r\n Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG8MB12S |
3
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W631GU6MB12S
Winbond
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1 | 1Gb DDR3 SDRAM 1600MHz VFBGA96 | BGA | W631GU6MB12S |
3
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W631GU6RB11S
Winbond
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1 | 1Gb DDR3 SDRAM 1866MHz VFBGA96 | BGA | W631GU6RB11S |
3
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W631GU6RB12I
Winbond
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1 | 1Gb DDR3 SDRAM 1600MHz VFBGA96 | BGA | W631GU6RB12I |
3
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W631GU6MB11S
Winbond
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1 | Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V\r\n Backward compatible to VDD, VDDQ = 1.5V ± 0.075V\r\n Double Data Rate architecture: two data transfers per clock cycle\r\n Eight internal banks for concurrent operation\r\n 8 bit prefetch architecture\r\n CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14\r\n Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)\r\n Programmable read burst ordering: interleaved or nibble sequential\r\n Bi-directional, d | BGA | W631GU6MB11S |
3
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W631GG6NB09A
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V\r\n Double Data Rate architecture: two data transfers per clock cycle\r\n Eight internal banks for concurrent operation\r\n 8 bit prefetch architecture\r\n CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14\r\n Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)\r\n Programmable read burst ordering: interleaved or nibble sequential\r\n Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG6NB09A |
3
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W631GG6MB15W
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V\r\n Double Data Rate architecture: two data transfers per clock cycle\r\n Eight internal banks for concurrent operation\r\n 8 bit prefetch architecture\r\n CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14\r\n Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)\r\n Programmable read burst ordering: interleaved or nibble sequential\r\n Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG6MB15W |
3
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W631GG6NB11S
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V\r\n⚫ Double Data Rate architecture: two data transfers per clock cycle\r\n⚫ Eight internal banks for concurrent operation\r\n⚫ 8 bit prefetch architecture\r\n⚫ CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14\r\n⚫ Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)\r\n⚫ Programmable read burst ordering: interleaved or nibble sequential\r\n⚫ Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received wit | BGA | W631GG6NB11S |
3
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W631GU8RB-09
Winbond
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1 | SDRAM - DDR3L Memory IC 1Gbit Parallel 800 MHz 20 ns 78-VFBGA (8x10.5) | BGA | W631GU8RB-09 |
3
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