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MFR-25SFTF523K4
YAGEO
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1 | METAL General RoHS compliant Pro d uct sp ecification – S ept e m b er 28, 2 021 V.1 A SHEET FILM RESISTORS General Purpose MFR Series ±0.5%, ±1%, ±2%, ±5% 1/6W to 3W RoHS compliant & Halogen Free | Resistors, Axial Diameter Horizontal Mounting | MFR-25SFTF523K4 |
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NJM1616
Nisshinbo
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1 | E inch: 2.81 ; Part Number Tags. NJM1616 ; WARNING: This product contains a chemical known to the State of California to cause cancer and birth defects or other ... | SOT23 (6-Pin) | NJM1616 |
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MCP6V14-E/ST
Microchip
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1 | Operational Amplifiers - Op Amps Quad, Zero Drift Op Amp, E Temp | Small Outline Packages | MCP6V14-E/ST |
3
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284962-E
TE Connectivity
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1 | Board to Board & Mezzanine Connectors STVE 45 F ABCDE 0412 7-00 TL 4,0 * 247 E | Other | 284962-E |
3
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MC9S08AC16MBE
NXP
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1 | 8 BIT 16K FLASH 4K RAM | Other | MC9S08AC16MBE |
2
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MKE02Z64VLC2
NXP
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1 | NXP - MKE02Z64VLC2 - ARM MCU, Kinetis E Series, Kinetis E Family KE0x Series Microcontrollers, ARM Cortex-M0+, 32bit | Quad Flat Packages | MKE02Z64VLC2 |
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1 | Cap Ceramic Single Suppression X1/Y1 0.001uF 400VAC/440VAC E 20% (7 X 6mm) Radial Disc 10mm 125°C Ammo | Other | CD45-E2GA102M-VKA |
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ASFLM5-66.000MHZ-L-T3
ABRACON
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1 | ULTRA MINIATURE PLASTIC PACKAGE Life Siz e 5.0 x 3.2 x 0.8 5 mm PURE SILICON™ CLOCK OSCILLATOR | Other | ASFLM5-66.000MHZ-L-T3 |
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S9KEAZN8AMTG
NXP
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1 | ARM Microcontrollers - MCU Kinetis E 32-bit MCU, ARM Cortex-M0+ core, 8KB Flash, Automotive Qualified, 48MHz, 16TSSOP | Small Outline Packages | S9KEAZN8AMTG |
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ATSAME70Q19A-CN
Microchip
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1 | MICROCHIP - ATSAME70Q19A-CN - ARM MCU, SAM E Series, SAM32 Family SAM E70 Series Microcontrollers, ARM Cortex-M7, 32bit, 300 MHz | BGA | ATSAME70Q19A-CN |
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M10162040108X0PWAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040108X0PWAY |
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M10162040054X0ISAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040054X0ISAY |
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M30162040108X0PWAY
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30162040108X0PWAY |
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M30162040054X0ISAY
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040054X0ISAY |
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M30162040054X0IWAY
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30162040054X0IWAY |
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M30162040108X0PSAR
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040108X0PSAR |
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M10162040108X0PSAR
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040108X0PSAR |
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M30162040054X0PWAY
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30162040054X0PWAY |
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M30162040054X0PSAY
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040054X0PSAY |
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RMLV1616AGSD-5S2#AC0
Renesas Electronics
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1 | The RMLV1616A Series is a family of 16-Mbit static RAMs organized 1, 048, 576-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV1616A Series has realized higher density, higher performance and low power consumption. The RMLV1616A Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 48pin TSOP (I), 52pin TSOP (II) or 48-ball fine pitch ball grid array. | Small Outline Packages | RMLV1616AGSD-5S2#AC0 |
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DE6E3KJ222MN3A
Murata Electronics
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1 | Ceramic Disc Capacitors 300Vac 2200pF E 20% X1 Y2 Ammo Pack | Other | DE6E3KJ222MN3A |
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5CEFA9F23C8N
Intel
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1 | FPGA - Field Programmable Gate Array FPGA - Cyclone V E 11356 LABs 224 IOs | BGA | 5CEFA9F23C8N |
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DE1E3RA152MA4BP01F
Murata Electronics
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1 | Cap Ceramic Single Suppression X1/Y1 0.0015uF 300VAC E 20% (8 X 4mm) Radial 10mm 125°C Bulk | Other | DE1E3RA152MA4BP01F |
3
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GW JTLPS1.CM-JKJM-XX56-1
ams OSRAM
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1 | High Power LEDs - White White 3500K CRI 90 DURIS E 2835 | Other | GW JTLPS1.CM-JKJM-XX56-1 |
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GW JTLPS1.EM-JLJN-XX510-1
ams OSRAM
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1 | High Power LEDs - White White 2200K CRI 80 DURIS E 2835 | Other | GW JTLPS1.EM-JLJN-XX510-1 |
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