175-R Model Download Search Results
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TH4B106K010C1800
Vishay
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1 | Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT(TM) Molded Case, HI-TMP® High Temperature 175 °C, Automotive Grade | Capacitor Moulded Polarised | TH4B106K010C1800 |
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TH4B106K010D1800
Vishay
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1 | Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT(TM) Molded Case, HI-TMP® High Temperature 175 °C, Automotive Grade | Capacitor Moulded Polarised | TH4B106K010D1800 |
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UJ4SC075009B7S
onsemi
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1 | On-resistance RDS(on); Maximum operating temperature: 175 ?C; Excellent Reverse Recover; Low Gate Charge | Other | UJ4SC075009B7S |
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TH4B106K6R3C1800
Vishay
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1 | Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT(TM) Molded Case, HI-TMP® High Temperature 175 °C, Automotive Grade | Capacitor Moulded Polarised | TH4B106K6R3C1800 |
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SICB5065XG5M-TP
MCC
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1 | 50Amp Silicon Carbide Schottky Diode 650 Volts Storage Temperature Range -55 - 175 °C | Other | SICB5065XG5M-TP |
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BUK9Y8R7-60E/A002X
Nexperia
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1 | N-channel 60 V, 8.7 mΩ, 175 °C logic level MOSFET in LFPAK56 | Other | BUK9Y8R7-60E/A002X |
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BUK9Y41-80E/A002X
Nexperia
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1 | N-channel 80 V, 45 mΩ, 175 °C logic level MOSFET in LFPAK56 | Other | BUK9Y41-80E/A002X |
2
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UF3SC120040B7S
onsemi
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1 | On-resistance RDS(on); Maximum operating temperature: 175 ?C; Excellent Reverse Recover; Low Gate Charge | Other | UF3SC120040B7S |
3
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NLCV25T-150K-EFD
TDK
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1 | TDK - NLCV25T-150K-EFD - High Frequency Inductor, 15 µH, NLCV25-EFD Series, 175 mA, 1008 [2520 Metric], Wirewound, 2.86 ohm | Inductor Moulded | NLCV25T-150K-EFD |
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STB24N60DM2
STMicroelectronics
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1 | N‑channel 600 V, 175 mΩ typ., 18 A MDmesh DM2 Power MOSFETs in a D²PAK, TO-220 and TO-247 packages | Other | STB24N60DM2 |
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STPS15SM80CG-TR
STMicroelectronics
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1 | Small Signal Schottky Diode, Dual Common Cathode, 80 V, 15 A, 955 mV, 150 A, 175 °C | Other | STPS15SM80CG-TR |
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FFSPF1065A
onsemi
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1 | Max Junction Temperature 175 °C; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery | Transistor Outline, Vertical | FFSPF1065A |
3
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STTH16L06CG
STMicroelectronics
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1 | Turbo 2 ultrafast high voltage rectifier , 1.35 v 2.08 V -65 °C to + 175 °C | Other | STTH16L06CG |
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SXBP-161R5+
Mini-Circuits
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1 | SXBP-161R5+ Lumped LC Band Pass Filter, 148 - 175 MHz, 50Ω | Other | SXBP-161R5+ |
3
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87898-0726
Molex
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1 | Headers & Wire Housings 2.54mm SRSW SMT Hd r W/O Cap 2.5SnLF 7P | Other | 87898-0726 |
3
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87898-0826
Molex
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1 | Headers & Wire Housings 2.54mm SRSW SMT Hd r W/O Cap 2.5SnLF 8P | Other | 87898-0826 |
3
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30700-5208
Molex
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1 | Automotive Connectors HDAC64 DR RA HDR 20 R 20 CKT BLACK POL 2 | Other | 30700-5208 |
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HSMF-C150
Avago Technologies
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1 | BROADCOM - HSMF-C150 - LED, Red, Green, SMD, 170 °, Rectangular, R 20mA, G 20mA | Other | HSMF-C150 |
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1425602
Phoenix Contact
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1 | SACC-CI-M12FSL-4FE-L180 THR SH GR R - Contact carrier, Power, 5-position, Socket, straight, M12, L-coding, THR solder connection | Other | 1425602 |
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SMM4F6.5A-TR
STMicroelectronics
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1 | 400 W, 6.5 V TVS in STmite Flat, Stand-off voltage range from 5 V to 33 V,Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C,Operating Tj max: 175 °C. | Other | SMM4F6.5A-TR |
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FFSH20120A-F085
onsemi
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1 | Max Junction Temperature 175 °C; Avalanche Rated 100 mJ; Positive Temperature Coefficient; High Surge Current Capacity; Ease of Paralleling; No Reverse Recovery / No Forward Recovery; AEC-Q101 qualified and PPAP Capable | Transistor Outline, Vertical | FFSH20120A-F085 |
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860130373003
Würth Elektronik
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1 | WCAP-ATET Aluminum Electrolytic Capacitors ATGD110101M016DSPA4A000; THT Radial; 100 µF ± 20%; 16 V(DC); 1000 h; -40°C / +125°C; size DxL 6.3 x 11.0; pitch 2.5; Pin ˜ 0.5; Max. Iripple 175 mA @120 Hz; LC 16 µA; DF 15% | Capacitor, Polarized Radial Diameter | 860130373003 |
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NGW30T65M3DFQQ
Nexperia
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1 | Device current is rated at 30 A Low conduction and switching losses Stable and tight parameters for easy parallel operation Maximum junction temperature 175 °C Fully rated and fast reverse recovery diode 5 μs short circuit withstand timeHV-H3TRB qualified | Transistor Outline, Vertical | NGW30T65M3DFQQ |
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NDSH25170A
onsemi
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1 | Max Junction Temperature 175 °C; Avalanche Rated 506 mJ; High Surge Current Capacity; Low IR @ TJ:175 °C; Positive Temperature Coefficie; No Reverse Recovery / No Forward Recovery; Low Vf @ TJ:175 °C | Other | NDSH25170A |
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FFSP2065B-F085
onsemi
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1 | Max Junction Temperature 175 oC; Avalanche Rated 94 mJ; High Surge Current Capacity; Positive Temperature Coefficient; Ease of Paralleling; No Reverse Recovery / No Forward Recovery; AEC-Q101 Qualified and PPAP Capable | Transistor Outline, Vertical | FFSP2065B-F085 |
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![Part Image](["//www.vishay.com/images/product-images/pt-medium/40152-pt-medium.jpg","//www.vishay.com/images/product-images/pt-medium/40152-pt-medium.jpg",null])
![Part Image](["https://componentsearchengine.com/Images/1/UJ4SC075009B7S.jpg","https://componentsearchengine.com/Images/1/UJ4SC075009B7S.jpg",null])
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