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53258-0329
Molex
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1 | Molex 53258, 3.5mm Pitch, 3 Way, 1 Row, Straight PCB Header, Through Hole | Header, Shrouded - Straight PTH Box | 53258-0329 |
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34958-0384
Molex
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1 | Automotive Connectors MINI50 VHDR 38CKT GRY POL B | Other | 34958-0384 |
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449145803
Molex
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1 | Micro-Fit CPI Header, Compliant Pin Interface, Dual Row, Vertical, Tin (Sn) Plating, Glow-Wire Capable | Other | 449145803 |
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TSSP58038
Vishay
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1 | IR Receiver Module 38KHz 25m EMI 3-Pin | Other | TSSP58038 |
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71V65803S150BQ
Renesas Electronics
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1 | The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V65803S150BQ |
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71V65803S133PFG8
Renesas Electronics
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1 | The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V65803S133PFG8 |
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1758034
Phoenix Contact
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1 | MSTBV 2,5/ 4-G-5,08 - PCB headers, nominal cross section: 2.5 mm2, color: green, nominal current: 12 A, rated voltage (III/2): 320 V, contact surface: Sn, contact connection type: Pin, number of potentials: 4, number of rows: 1, number of positions: 4, number of connections: 4, product range: MSTBV 2,5/..-G, pitch: 5.08 mm, mounting: Wave soldering, pin layout: Linear pinning, solder pin [P]: 3.9 mm, number of solder pins per potential: 1, plug-in system: COMBICON MSTB 2,5, Pin connector pattern | Other | 1758034 |
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71V65803S100BGGI
Renesas Electronics
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1 | The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V65803S100BGGI |
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71V65803S133BGI
Renesas Electronics
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1 | The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V65803S133BGI |
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FTE-158-03-G-DV-A-P
SAMTEC
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1 | 116 Position, 0.80 mm Surface Mount Micro Terminal Strip, Vertical Mount | Other | FTE-158-03-G-DV-A-P |
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71V65803S150BG8
Renesas Electronics
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1 | The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V65803S150BG8 |
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B58035U9255M001
TDK
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1 | TDK - B58035U9255M001 - Multilayer Ceramic Capacitor, 2.5 ?F, 900 V, SMD, CeraLink FA Series, ? 20% | Other | B58035U9255M001 |
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B58035U5305M062
TDK
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1 | Specialty Ceramic Capacitors 500V 3uF Ceralink Flex Assembly 3 | Other | B58035U5305M062 |
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B58035U7105M052
TDK
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1 | CeraLink? Capacitors, 1 ?F, 700 V, LxWxT=7.4x6x9.1 mm | Other | B58035U7105M052 |
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1758030000
Weidmüller
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1 | PCB terminal, 320 V, 15 A, Pitch in mm: 5.08, 2.5 mm², Number of poles: 30, Tension-clamp connection, THT solder connection, 135°, Box | Other | 1758030000 |
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71V65803S150BGI8
Renesas Electronics
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1 | The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V65803S150BGI8 |
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B88069X5803T602
TDK
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1 | Surge Arresters, 2 electrodes Arresters, Nominal DC sparkover voltage = 350V | Other | B88069X5803T602 |
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71V65803S100PFGI
Renesas Electronics
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1 | The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V65803S100PFGI |
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71V65803S150PFGI8
Renesas Electronics
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1 | The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V65803S150PFGI8 |
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71V65803S100BQI
Renesas Electronics
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1 | The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V65803S100BQI |
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71V65803S150BQI8
Renesas Electronics
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1 | The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V65803S150BQI8 |
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MS580330BA01-00
TE Connectivity
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1 | Dimensions: Dimensions .24 x .25 INCH | Dimensions 6.2 x 6.4 MM | Electrical Characteristics: Board Level Pressure Sensor Supply Voltage 1.8 – 3.6 V | Operation/Application: Board Level Pressure Sensor Accuracy ±400mbar | Resolution .5 | Output/Span 24 bit ADC | Pressure 30000 MBAR | Other: Sensor Options No Option | Packaging Features: Board Level Pressure Sensor Package Surface Mountable | Product Type Features: Board Level Pressure Sensor Type Digital Pressure and Altimeter Sensor Modules | Board Leve | Other | MS580330BA01-00 |
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0558-0-15-80-30-84-10-0
Mill-Max
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1 | Pin Receptacle Connector 0.015" ~ 0.025" (0.38mm ~ 0.64mm) No Tail Solder | Other | 0558-0-15-80-30-84-10-0 |
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34958-0340
Molex
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1 | Automotive Connectors MINI50 UNSLVHYBD HDR 3RW 34CKT BLK POL A | Other | 34958-0340 |
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MS580307BA06-00
TE Connectivity
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1 | Board Mount Pressure Sensors DUAL-R HE WHITEGEL TUBE | Other | MS580307BA06-00 |
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