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M10162040054X0ISAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040054X0ISAY |
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M30042040054X0ISAR
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30042040054X0ISAR |
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DS2401-SL+T&R
Analog Devices
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1 | Security ICs / Authentication ICs Silicon Serial Number | Other | DS2401-SL+T&R |
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M30162040108X0PWAY
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30162040108X0PWAY |
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M30162040054X0ISAY
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040054X0ISAY |
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M30162040054X0IWAY
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30162040054X0IWAY |
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M30082040054X0PWAR
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30082040054X0PWAR |
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S70KL1281DABHI020
Infineon
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1 | DRAM IC 128 Mb FLASH MEMORY | BGA | S70KL1281DABHI020 |
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S70KL1281DABHI023
Infineon
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1 | DRAM Chip DDR SDRAM 128Mbit 16Mx8 3V/3.3V 24-Pin Fortified BGA T/R | BGA | S70KL1281DABHI023 |
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MR5A16AMA35
Everspin Technologies
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1 | MRAM 3.3V 32Mb MRAM with unlimited read & write endurance, currently MSL 6 | BGA | MR5A16AMA35 |
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MR4A16BYS35
Everspin Technologies
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1 | NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM | Small Outline Packages | MR4A16BYS35 |
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MR25H40MDFR
Everspin Technologies
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1 | NVRAM 4Mb 3.3V 512Kx8 SPI Pre-Qual Sample MRAM | Small Outline No-lead | MR25H40MDFR |
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MB85RS2MTPF-G-JNERE2
FUJITSU
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1 | FRAM (Ferroelectric RAM) Memory IC 2Mb (256K x 8) SPI 25MHz 8-SOP | Small Outline Packages | MB85RS2MTPF-G-JNERE2 |
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S71KL512SC0BHV003
Infineon
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1 | IC FLASH RAM 512MIT PARALLEL | BGA | S71KL512SC0BHV003 |
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MB85RS256BPNF-G-JNERE1
FUJITSU
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1 | FRAM FRAM 256Kb (32K x 8) SPI SOIC-8_150mil RoHS FPT-8P-M02 | Small Outline Packages | MB85RS256BPNF-G-JNERE1 |
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MR5A16AYS35
Everspin Technologies
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1 | MRAM (Magnetoresistive RAM) Memory IC 32Mbit Parallel 35 ns 54-TSOP2 | Small Outline Packages | MR5A16AYS35 |
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47L16-E/SN
Microchip
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1 | SRAM 16k, 3.0V EERAM EXT | Small Outline Packages | 47L16-E/SN |
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47L04-I/ST
Microchip
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1 | MICROCHIP - 47L04-I/ST - NVRAM, EERAM, 4 Kbit, 512 x 8bit, I2C, TSSOP | Small Outline Packages | 47L04-I/ST |
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MB85R4M2TFN-G-ASE1
FUJITSU
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1 | Memory FRAM 4 M (256 K × 16) Bit | Small Outline Packages | MB85R4M2TFN-G-ASE1 |
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MB85RS16NPN-G-AMEWE1
FUJITSU
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1 | IC FRAM 16K SPI 20MHZ 8SON | Other | MB85RS16NPN-G-AMEWE1 |
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47C04-E/ST
Microchip
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1 | SRAM 4k, 5.0V EERAM EXT | Small Outline Packages | 47C04-E/ST |
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S27KL0641DABHV020
Infineon
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1 | CYPRESS SEMICONDUCTOR - S27KL0641DABHV020 - DRAM, 64MBIT, 36NS, FBGA-24 | BGA | S27KL0641DABHV020 |
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MR4A16BUYS45R
Everspin Technologies
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1 | MRAM 16Mb 3.3V 45ns 1Mx16 Parallel MRAM | Small Outline Packages | MR4A16BUYS45R |
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MR25H256MDCR
Everspin Technologies
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1 | MRAM 256Kb 3.3V 32Kx8 Serial MRAM | Small Outline No-lead | MR25H256MDCR |
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AT88SC118-SH-CN
Microchip
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1 | Security ICs / Authentication ICs CryptoMemory Comp 8SOIC, GRN | Small Outline Packages | AT88SC118-SH-CN |
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![Part Image](["https://componentsearchengine.com/2D/0T/12650722.3.1.png",null,null])
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