MJD11 Model Download Search Results
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MJD112
Continental Device India Ltd
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1 | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin | MJD112 |
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MJD112T4G
onsemi
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1 | Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); High DC Current Gain hFE = 2,500 (Typ) @ IC = 2.0 Adc; Monolithic Construction With Built-in Base-Emitter Shunt Resistors; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("1" Suffix); Surface Mount Replacements for TIP110-TIP117 Series; Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- | MJD112T4G |
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MJD117-T1
Samsung Semiconductor
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1 | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin | MJD117-T1 |
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MJD117TF
onsemi
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1 | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin | MJD117TF |
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MJD112
Galaxy Semi-Conductor Co Ltd
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1 | Power Bipolar Transistor, | MJD112 |
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MJD112-1G
onsemi
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1 | Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); High DC Current Gain hFE = 2,500 (Typ) @ IC = 2.0 Adc; Monolithic Construction With Built-in Base-Emitter Shunt Resistors; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("1" Suffix); Surface Mount Replacements for TIP110-TIP117 Series; Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- | MJD112-1G |
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MJD117
STMicroelectronics
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1 | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin | MJD117 |
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MJD112T4
Continental Device India Ltd
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1 | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin | MJD112T4 |
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NJVMJD112T4G
onsemi
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1 | Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); High DC Current Gain hFE = 2,500 (Typ) @ IC = 2.0 Adc; Monolithic Construction With Built-in Base-Emitter Shunt Resistors; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("1" Suffix); Surface Mount Replacements for TIP110-TIP117 Series; Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- | NJVMJD112T4G |
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NJVMJD117T4G
onsemi
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1 | Power Bipolar Transistor | NJVMJD117T4G |
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NJVMJD112G
onsemi
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1 | Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); High DC Current Gain hFE = 2,500 (Typ) @ IC = 2.0 Adc; Monolithic Construction With Built-in Base-Emitter Shunt Resistors; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("1" Suffix); Surface Mount Replacements for TIP110-TIP117 Series; Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- | NJVMJD112G |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_3.jpg"])
![Part Image](["https://componentsearchengine.com/graphics/no-image.png",null,null])
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