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M30042040054X0IWAR
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30042040054X0IWAR |
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M10082040108X0ISAR
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040108X0ISAR |
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M10082040108X0PSAR
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040108X0PSAR |
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M10082040054X0PSAY
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040054X0PSAY |
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M30162040054X0PSAR
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040054X0PSAR |
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M30082040108X0ISAR
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30082040108X0ISAR |
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M30042040108X0IWAY
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30042040108X0IWAY |
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M30042040054X0PSAR
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30042040054X0PSAR |
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DS2502+
Analog Devices
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1 | Add only memory with EPROM,DS2502 1kb | Other | DS2502+ |
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M27C2001-10F1
STMicroelectronics
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1 | EPROM | Ceramic Dual-In-Line Packages | M27C2001-10F1 |
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M27C256B-12F6
STMicroelectronics
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1 | UV EPROM and OTP EPROM | Ceramic Dual-In-Line Packages | M27C256B-12F6 |
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AT27LV020A-12JU
Microchip
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1 | EPROM 2Mb (256Kx8) OTP 3V 120ns | Plastic Leaded Chip Carrier | AT27LV020A-12JU |
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BQ2022ADBZRG4
Texas Instruments
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1 | IC EPROM 1K SINGLE WIRE SOT23-3 | SOT23 (3-Pin) | BQ2022ADBZRG4 |
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AT27C512R-70PU
Microchip
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1 | EPROM 512Kb (64Kx8) OTP 5V 70ns | Dual-In-Line Packages | AT27C512R-70PU |
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M27C4002-10F1
STMicroelectronics
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1 | STMicroelectronics M27C4002-10F1, UV Erasable EPROM Memory 4Mbit 256K x 16 bit 100ns, 5V 40-Pin CFDIP W | Dual-In-Line Packages | M27C4002-10F1 |
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M27C160-50F1
STMicroelectronics
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1 | IC EPROM UV 16MBIT 50NS 42CDIP | Dual-In-Line Packages | M27C160-50F1 |
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AT27C020-55JU
Microchip
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1 | AT27C020-55JU, OTP EPROM Memory 2Mbit 256K x 8 bit 55ns, 5.0V 32-Pin PLCC | Plastic Leaded Chip Carrier | AT27C020-55JU |
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AT27C4096-90PU
Microchip
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1 | EPROM OTP 4M-bit 256Kx16 90ns 40-Pin AT27C4096-90PU, EPROM Memory Chip 4Mbit 256K x 16 bit 90ns 40-Pin PDIP | Dual-In-Line Packages | AT27C4096-90PU |
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M27C512-90B6
STMicroelectronics
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1 | UV EPROM and OTP EPROM | Dual-In-Line Packages | M27C512-90B6 |
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AT27C040-70JU-T
Microchip
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1 | 4Mb (512K x 8) OTP 70NS PLCC IND GRN | Plastic Leaded Chip Carrier | AT27C040-70JU-T |
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AT27C4096-90PU
Microchip
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1 | EPROM OTP 4M-bit 256Kx16 90ns 40-Pin AT27C4096-90PU, EPROM Memory Chip 4Mbit 256K x 16 bit 90ns 40-Pin PDIP | Dual-In-Line Packages | AT27C4096-90PU |
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AT27C010-90JI
Microchip
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1 | EPROM 1M bit | Plastic Leaded Chip Carrier | AT27C010-90JI |
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AM27C2048-120JC
AMD
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1 | Fast access time — Speed options as fast as 55 ns ■ Low power consumption — 100 µA maximum CMOS standby current | Plastic Leaded Chip Carrier | AM27C2048-120JC |
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JBP28L22MJ
Texas Instruments
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1 | Texas Instruments JBP28L22MJ, PROM Memory 2kbit Through Hole, 4.5 → 5.5 V, 20-Pin CDIP | Dual-In-Line Packages | JBP28L22MJ |
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AT27C020-55JU
Microchip
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1 | AT27C020-55JU, OTP EPROM Memory 2Mbit 256K x 8 bit 55ns, 5.0V 32-Pin PLCC | Plastic Leaded Chip Carrier | AT27C020-55JU |
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