00820 Model Download Search Results
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801-87-008-20-001101
Preci-Dip
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1 | Headers & Wire Housings | Header, Receptacle - Right Angle PTH Box | 801-87-008-20-001101 |
3
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FKP2J008201D00HSSD
WIMA
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1 | Film Capacitor FKP 2 820 pF 630 VDC 4.5x6x7.2 | Other | FKP2J008201D00HSSD |
3
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VR37000008204JA100
Vishay
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1 | 8.2 MOhms ±5% 0.5W, 1/2W Through Hole Resistor Axial Automotive AEC-Q200, Pulse Withstanding Metal Film | Resistors, Axial Diameter Horizontal Mounting | VR37000008204JA100 |
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TT44080080-0820
XFCN
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1 | PCB Soldering Terminal ROHS | Other | TT44080080-0820 |
3
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SFR2500008201FR500
Vishay
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1 | Res Metal Film 8.2K Ohm 1% 0.4W ±100ppm/°C Conformal Coated AXL T/R | Resistors, Axial Diameter Horizontal Mounting | SFR2500008201FR500 |
3
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1210J1000820GAR
Knowles
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT | Capacitor Chip Non-polarised | 1210J1000820GAR |
3
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1210J2500820JCR
Knowles
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT | Capacitor Chip Non-polarised | 1210J2500820JCR |
3
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1210J0500820KFR
Knowles
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT | Capacitor Chip Non-polarised | 1210J0500820KFR |
3
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SFR25H0008200FA500
Vishay
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1 | Metal Film Resistors - Through Hole SFR25H 1% A5 820R | Resistors, Axial Diameter Horizontal Mounting | SFR25H0008200FA500 |
3
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H130A-24.000-8-2030-TR-NS1
RALTRON
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1 | MHz Crystal, 24 MHz, 5 x 3.2 mm, ±20 ppm tolerance, ±30 ppm stability, 8 pF, -10~70°C, SMD | Other | H130A-24.000-8-2030-TR-NS1 |
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RH100-10.000-8-2020-TR
RALTRON
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1 | MHz Crystal, 10 MHz, 3.2 x 2.5 mm, ±20 ppm tolerance, ±20 ppm stability, 8 pF, -20~70°C, SMD | Other | RH100-10.000-8-2020-TR |
3
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M30082040108X0IWAY
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30082040108X0IWAY |
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M30082040054X0IWAY
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30082040054X0IWAY |
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M30082040108X0PWAR
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30082040108X0PWAR |
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M10082040108X0PSAY
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040108X0PSAY |
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M10082040108X0PWAR
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10082040108X0PWAR |
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C2E-12.000-8-2050-X1-R
Aker Technology
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1 | Crystal, 2.00mm x1.60mm,12MHz,8pF,-40-125C | Other | C2E-12.000-8-2050-X1-R |
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M30082040054X0ISAR
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30082040054X0ISAR |
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C3E-32.000-8-2020-R3
Aker Technology
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1 | Crystal, 3.20mm x2.50mm,32MHz,8pF.-20-70C | Other | C3E-32.000-8-2020-R3 |
3
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C3E-12.000-8-2050-X1-R
Aker Technology
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1 | Crystal, 3.20mm x2.50mm,12MHz,8pF,-40-125C | Other | C3E-12.000-8-2050-X1-R |
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PJS008-2000-0
Yamaichi
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1 | Memory Card Connectors MicroSD Card Conn Revrs Mnt Push-Push | Other | PJS008-2000-0 |
3
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829-22-008-20-001101
Mill-Max
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1 | Headers & Wire Housings 8P 1R Thru-Hole R/A1.14mm MidStroke | Header, Unshrouded - Right Angle PTH Pin | 829-22-008-20-001101 |
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560020-0820
Molex
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1 | Molex DURACLIK Series, Series Number 560020, 2mm Pitch 8 Way 1 Row Vertical PCB Header, 3A | Other | 560020-0820 |
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PJS008-2003-1
Yamaichi
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1 | micro SD push/push reversed type, with positionin | Other | PJS008-2003-1 |
3
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61200820621
Würth Elektronik
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1 | Wurth Elektronik 6120 Series, 2.54mm Pitch 8 Way 2 Row Straight PCB Header, Solder Termination, 3A | Other | 61200820621 |
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![Part Image](["https://componentsearchengine.com/Images/1/801-87-008-20-001101.jpg",null,null])
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