BC857 Model Download Search Results
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BC857AM3-TP
MCC
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1 | Bipolar (BJT) Transistor PNP 50 V 100 mA 100MHz 265 mW Surface Mount SOT-723 | Other | BC857AM3-TP |
3
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BC857BL3-TP
MCC
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1 | PNPPlastic-EncapsulateTransistors | Other | BC857BL3-TP |
3
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BC857BM3-TP
MCC
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1 | Bipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 265 mW Surface Mount SOT-723 | Other | BC857BM3-TP |
3
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BC857CL3-TP
MCC
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1 | Bipolar (BJT) Transistor PNP 50 V 100 mA 100MHz 150 mW Surface Mount DFN1006-3 | Other | BC857CL3-TP |
3
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BC857BS/3X
Nexperia
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1 | PNP general purpose double transistor | SOT23 (6-Pin) | BC857BS/3X |
3
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BC857BS-13P
MCC
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1 | Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 100mA 100MHz 200mW Surface Mount SOT-363 | SOT23 (6-Pin) | BC857BS-13P |
3
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BC857S-TPQ2
MCC
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1 | Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 200mA 200MHz 300mW Surface Mount SOT-363 | SOT23 (6-Pin) | BC857S-TPQ2 |
3
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BC857CLT1G.
Diodes Incorporated
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1 | Bipolar Transistors - BJT 100mA 50V PNP | SOT23 (3-Pin) | BC857CLT1G. |
3
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BC857CS-AU
PANJIT
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1 | General Transistor - BC857CS-AU , AEC-Q101, PNP+PNP, Dual, VCBO Max. -50V, -100mA, SOT-363 | SOT23 (6-Pin) | BC857CS-AU |
3
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BC857BS-TPQ2
MCC
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1 | Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 200mA 200MHz 300mW Surface Mount SOT-363 | Other | BC857BS-TPQ2 |
3
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BC857C215
Nexperia
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1 | Low current (max. 100 mA)• Low voltage (max. 65 V) | SOT23 (3-Pin) | BC857C215 |
3
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SBC857CLT1G
onsemi
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1 | Pb-Free Packages are Available; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable | SOT23 (3-Pin) | SBC857CLT1G |
3
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NSVBC857CWT1G
onsemi
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1 | Device Marking: BC856AWT1 = 3A BC856BWT1 = 3B BC857AWT1 = 3E BC857BWT1 = 3F BC858AWT1 = 3J BC858BWT1 = 3K BC858CWT1 = 3L; Pb-Free Packages are Available; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable | SOT23 (3-Pin) | NSVBC857CWT1G |
3
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NSVBC857BTT1G
onsemi
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1 | Device Marking: BC857BTT1 = 3F; Pb-Free Package is Available* | SOT23 (3-Pin) | NSVBC857BTT1G |
3
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SBC857ALT1G
onsemi
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1 | Bipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236) | SOT23 (3-Pin) | SBC857ALT1G |
3
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TBC857
Toshiba
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1 | PNP Bipolar Transistor, -50 V, -0.15 A, SOT-23(SOT23) | Other | TBC857 |
3
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SBC857CDW1T1G
onsemi
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1 | Device Marking: BC856BDW1T1 = 3B BC857BDW1T1 = 3F BC857CDW1T1 = 3G BC858BDW1T1 = 3K BC858CDW1T1 = 3L; Pb-Free Packages are Available; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable | SOT23 (6-Pin) | SBC857CDW1T1G |
3
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TBC857B,LM
Toshiba
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1 | Bipolar Transistors - BJT BJT PNP -0.15A -50V | Other | TBC857B,LM |
3
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NSVBC857BLT3G
onsemi
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1 | Pb-Free Packages are Available; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable | SOT23 (3-Pin) | NSVBC857BLT3G |
3
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SBC857BLT1G
onsemi
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1 | Pb-Free Packages are Available; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable | SOT23 (3-Pin) | SBC857BLT1G |
3
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SBC857BWT1G
onsemi
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1 | Device Marking: BC856AWT1 = 3A BC856BWT1 = 3B BC857AWT1 = 3E BC857BWT1 = 3F BC858AWT1 = 3J BC858BWT1 = 3K BC858CWT1 = 3L; Pb-Free Packages are Available; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable | SOT23 (3-Pin) | SBC857BWT1G |
3
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BC857CDW1T1
onsemi
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1 | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon | BC857CDW1T1 |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC857ATT/R
Nexperia
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1 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | BC857ATT/R |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC857WA
Infineon Technologies AG
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1 | Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon | BC857WA |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC857C-TAPE-13
NXP Semiconductors
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1 | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon | BC857C-TAPE-13 |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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