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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	71V3556SA150BGGI8 Renesas Electronics	1	The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.	BGA	71V3556SA150BGGI8	3D model available Symbol and footprint available 3	1 Download Model
	71V124SA15PHGI8 Renesas Electronics	1	The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Small Outline Packages	71V124SA15PHGI8	3D model available Symbol and footprint available 3	1 Download Model
	TX2SA-1.5V-X Panasonic	1	2,000 Vrms dielectric strength, 2 Form C and 2 A relays	Other	TX2SA-1.5V-X	3D model available Symbol and footprint available 3	1 Download Model
	71V3556SA150BG8 Renesas Electronics	1	The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.	BGA	71V3556SA150BG8	3D model available Symbol and footprint available 3	1 Download Model

	SA15A-AP MCC	1	500WATTS TVS 5.0 to 170 VOLTS	Diodes, Axial Diameter Horizontal Mounting	SA15A-AP	3D model available Symbol and footprint available 3	1 Download Model
	KPSA15-12 TDK Lambda	1	Open Frame AC DC Converters 1 Output 12V 85 ~ 264 VAC Input , 15W , 0°C ~ 70°C	Other	KPSA15-12	3D model available Symbol and footprint available 3	1 Download Model
	71V256SA15YG Renesas Electronics	1	The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71V256SA15YG	3D model available Symbol and footprint available 3	1 Download Model
	71V124SA15TYG Renesas Electronics	1	The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71V124SA15TYG	3D model available Symbol and footprint available 3	1 Download Model
	KPSA15-15 TDK Lambda	1	Open Frame AC DC Converters 1 Output 15V 85 ~ 264 VAC Input , 15W , 0°C ~ 70°C	Other	KPSA15-15	3D model available Symbol and footprint available 3	1 Download Model
	SA15A-TP MCC	1	500WATTS TVS5.0 to 170 VOLTS	Diodes, Axial Diameter Horizontal Mounting	SA15A-TP	3D model available Symbol and footprint available 3	1 Download Model
	TXD2SA-1.5V-1-X Panasonic	1	6,000 V surge withstand voltage, 2 Form C and 2 A high dielectric strength relays	Other	TXD2SA-1.5V-1-X	3D model available Symbol and footprint available 3	1 Download Model
	2SA1576AT106 ROHM Semiconductor	1	PNP General Purpose Amplification Transistor: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.	Other	2SA1576AT106	3D model available Symbol and footprint available 3	1 Download Model
	6116SA150TDB Renesas Electronics	1	The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Ceramic Dual-In-Line Packages	6116SA150TDB	3D model not available Symbol and footprint available 2	1 Download Model
	71V124SA15TYGI Renesas Electronics	1	The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71V124SA15TYGI	3D model available Symbol and footprint available 3	1 Download Model
	2SA1586-Y,LXHF Toshiba	1	Bipolar (BJT) Transistor PNP 50 V 150 mA 80MHz 200 mW Surface Mount USM	Other	2SA1586-Y,LXHF	3D model available Symbol and footprint available 3	1 Download Model

	2SA1586-GR,LF Toshiba	1	Bipolar (BJT) Transistor PNP 50 V 150 mA 80MHz 100 mW Surface Mount SC-70	Other	2SA1586-GR,LF	3D model available Symbol and footprint available 3	1 Download Model
	2SA1576U3T106R ROHM Semiconductor	1	Bipolar Transistors - BJT PNP -50V -0.15A 0.2W SOT-323; SC-70; UMT	Other	2SA1576U3T106R	3D model available Symbol and footprint available 3	1 Download Model
	71V3556SA150BQ Renesas Electronics	1	The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.	BGA	71V3556SA150BQ	3D model available Symbol and footprint available 3	1 Download Model
	TX2SA-1.5V-TH-Z Panasonic	1	7.5 A inrush current possible, 2 Form C small size relays	Other	TX2SA-1.5V-TH-Z	3D model available Symbol and footprint available 3	1 Download Model
	DLP0NSA150HL2B Murata Electronics	1	DLP0NSA_L2B Series EMI Suppression Filter 15Ω at 100MHz 100mA 5V	Other	DLP0NSA150HL2B	3D model available Symbol and footprint available 3	1 Download Model
	71V256SA15PZG Renesas Electronics	1	The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Small Outline Packages	71V256SA15PZG	3D model available Symbol and footprint available 3	1 Download Model
	DE21XSA150KA2BT01F Murata Electronics	1	Capacitor 15pF ±10% DE2 D=6mm T=5mm F=5mm d=0.6mm	Other	DE21XSA150KA2BT01F	3D model available Symbol and footprint available 3	1 Download Model
	TXD2SA-1.5V-1 Panasonic	1	6,000 V surge withstand voltage, 2 Form C and 2 A high dielectric strength relays	Other	TXD2SA-1.5V-1	3D model available Symbol and footprint available 3	1 Download Model
	TXS2SA-1.5V-1-Z Panasonic	1	High sensitivity, 50 mW operating power, 2 Form C and 1 A relays	Other	TXS2SA-1.5V-1-Z	3D model available Symbol and footprint available 3	1 Download Model
	TQ2SA-1.5V Panasonic	1	Flat, 5 mm 2 Form C, 2 A, relays	Other	TQ2SA-1.5V	3D model available Symbol and footprint available 3	1 Download Model
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