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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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SA15A-TP
MCC
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1 | 500WATTS TVS5.0 to 170 VOLTS | Diodes, Axial Diameter Horizontal Mounting | SA15A-TP |
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71V016SA15PHGI
Renesas Electronics
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1 | The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Small Outline Packages | 71V016SA15PHGI |
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2SA1576AT106
ROHM Semiconductor
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1 | PNP General Purpose Amplification Transistor: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market. | Other | 2SA1576AT106 |
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TXS2SA-1.5V
Panasonic
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1 | High sensitivity, 50 mW operating power, 2 Form C and 1 A relays | Other | TXS2SA-1.5V |
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KPSA15-15
TDK Lambda
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1 | Open Frame AC DC Converters 1 Output 15V 85 ~ 264 VAC Input , 15W , 0°C ~ 70°C | Other | KPSA15-15 |
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TX2SA-1.5V-X
Panasonic
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1 | 2,000 Vrms dielectric strength, 2 Form C and 2 A relays | Other | TX2SA-1.5V-X |
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71V3556SA150BG8
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA150BG8 |
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TXD2SA-1.5V-1-X
Panasonic
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1 | 6,000 V surge withstand voltage, 2 Form C and 2 A high dielectric strength relays | Other | TXD2SA-1.5V-1-X |
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KPSA15-12
TDK Lambda
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1 | Open Frame AC DC Converters 1 Output 12V 85 ~ 264 VAC Input , 15W , 0°C ~ 70°C | Other | KPSA15-12 |
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SA15A-AP
MCC
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1 | 500WATTS TVS 5.0 to 170 VOLTS | Diodes, Axial Diameter Horizontal Mounting | SA15A-AP |
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6116SA150TDB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 6116SA150TDB |
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71V124SA15TYGI
Renesas Electronics
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1 | The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Other | 71V124SA15TYGI |
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71256SA15TPG
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Dual-In-Line Packages | 71256SA15TPG |
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DE21XSA150KA2BT01F
Murata Electronics
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1 | Capacitor 15pF ±10% DE2 D=6mm T=5mm F=5mm d=0.6mm | Other | DE21XSA150KA2BT01F |
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TX2SA-1.5V-TH-Z
Panasonic
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1 | 7.5 A inrush current possible, 2 Form C small size relays | Other | TX2SA-1.5V-TH-Z |
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DLP0NSA150HL2B
Murata Electronics
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1 | DLP0NSA_L2B Series EMI Suppression Filter 15Ω at 100MHz 100mA 5V | Other | DLP0NSA150HL2B |
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71V3556SA150BQ
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA150BQ |
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TXS2SA-1.5V-1-Z
Panasonic
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1 | High sensitivity, 50 mW operating power, 2 Form C and 1 A relays | Other | TXS2SA-1.5V-1-Z |
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71V016SA15YG
Renesas Electronics
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1 | The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71V016SA15YG |
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TQ2SA-1.5V
Panasonic
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1 | Flat, 5 mm 2 Form C, 2 A, relays | Other | TQ2SA-1.5V |
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TXD2SA-1.5V-1
Panasonic
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1 | 6,000 V surge withstand voltage, 2 Form C and 2 A high dielectric strength relays | Other | TXD2SA-1.5V-1 |
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6116SA15SOG8
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Small Outline Packages | 6116SA15SOG8 |
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71V3556SA150BGGI
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA150BGGI |
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71V256SA15PZGI8
Renesas Electronics
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1 | The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Other | 71V256SA15PZGI8 |
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2SA1586-Y,LXHF
Toshiba
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1 | Bipolar (BJT) Transistor PNP 50 V 150 mA 80MHz 200 mW Surface Mount USM | Other | 2SA1586-Y,LXHF |
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