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TB006-508-16BE
Same Sky
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1 | TB006-508 Series - 2~24 Poles, Screw Type, Horizontal, 5.08 Pitch, 26~14 (AWG), Terminal Block Connector | Other | TB006-508-16BE |
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865080649013
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEE065470M050DVCTBB000; SMT V-Chip; 47 µF ± 20%; 50 V(DC); 2000 h; -55°C / +105°C; size DxL 8.0 x 6.5; Max. Iripple 240 mA @100 kHz; LC 23.5 µA 12% | Capacitor Al Electrolytic | 865080649013 |
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865080657017
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEF105151M050DVCTEB000; SMT V-Chip; 150 µF ± 20%; 50 V(DC); 2000 h; -55°C / +105°C; size DxL 10.0 x 10.5; Max. Iripple 600 mA @100 kHz; LC 75 µA; DF 12 % | Capacitor Al Electrolytic | 865080657017 |
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UF3C065080K4S
onsemi
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1 | N-Channel 650 V 31A (Tc) 190W (Tc) Through Hole TO-247-4 | Other | UF3C065080K4S |
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865080543008
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASED055330M035DVCTBB000; SMT V-Chip; 33 µF ± 20%; 35 V(DC); 2000 h; -55°C / +105°C; size DxL 6.3 x 5.5; Max. Iripple 240 mA @100 kHz; LC 11.55 µA; DF 14 % | Capacitor Al Electrolytic | 865080543008 |
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865080257014
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEF105102M010DVCTEB000; SMT V-Chip; 1000 µF ± 20%; 10 V(DC); 2000 h; -55°C / +105°C; size DxL 10.0 x 10.5; Max. Iripple 740 mA @100 kHz; LC 100 µA; DF 19 % | Capacitor Al Electrolytic | 865080257014 |
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GS66508P-MR
GaN Systems
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1 | 650V, 30A, Enhancement mode GaN Transistor, GaNPX® package, Bottom-side cooled | Other | GS66508P-MR |
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865080653016
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEE105101M050DVCTEB000; SMT V-Chip; 100 µF ± 20%; 50 V(DC); 2000 h; -55°C / +105°C; size DxL 8.0 x 10.5; Max. Iripple 350 mA @100 kHz; LC 50 µA; DF 12 % | Capacitor Al Electrolytic | 865080653016 |
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865080757014
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEF105101M063DVCTEB000; SMT V-Chip; 100 µF ± 20%; 63 V(DC); 2000 h; -55°C / +105°C; size DxL 10.0 x 10.5; Max. Iripple 280 mA @120 Hz; LC 63 µA; DF 12 % | Capacitor Al Electrolytic | 865080757014 |
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865080462016
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEH140102M025DVCTGE000; SMT V-Chip; 1000 µF ± 20%; 25 V (DC); 5000 h; - 55 °C / +105 °C; size DxL 12.5 x 14.0; Max. Iripple 1100 mA@ 100 kHz; LC 250 µA; DF 14%; | Capacitor Al Electrolytic | 865080462016 |
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865080542005
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEC055150M035DVCTBB000; SMT V-Chip; 15 µF ± 20%; 35 V(DC); 2000 h; -55°C / +105°C; size DxL 5.0 x 5.5; Max. Iripple 140 mA @100 kHz; LC 5.25 µA; DF 14 % | Capacitor Al Electrolytic | 865080542005 |
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GS66508T
GaN Systems
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1 | 650V, 30A, Enhancement mode GaN Transistor, GaNPX® package, Top-side cooled | Other | GS66508T |
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865080562016
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEH140471M035DVCTGE000; SMT V-Chip; 470 µF ± 20%; 35 V (DC); 5000 h; - 55 °C / +105 °C; size DxL 12.5 x 14.0; Max. Iripple 1100 mA@ 100 kHz; LC 164.5 µA; DF 14%; | Capacitor Al Electrolytic | 865080562016 |
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865080557015
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEF105331M035DVCTEB000; SMT V-Chip; 330 µF ± 20%; 35 V(DC); 2000 h; -55°C / +105°C; size DxL 10.0 x 10.5; Max. Iripple 650 mA @100 kHz; LC 115.5 µA; DF 14 % | Capacitor Al Electrolytic | 865080557015 |
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865080563018
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEK170152M035DVCTHE000; SMT V-Chip; 1500 µF ± 20%; 35 V(DC); 5000 h; -55°C / +105°C; size DxL 16.0 x 17.0; Max. Iripple 1250 mA @100 kHz; LC 525 µA; DF 14 % | Capacitor Al Electrolytic | 865080563018 |
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865080562017
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEH140681M035DVCTGE000; SMT V-Chip; 680 µF ± 20%; 35 V(DC); 5000 h; -55°C / +105°C; size DxL 12.5 x 14.0; Max. Iripple 1100 mA @100 kHz; LC 238 µA; DF 14 % | Capacitor Al Electrolytic | 865080562017 |
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TB006-508-20BE
Same Sky
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1 | TB006-508 Series - 2~24 Poles, Screw Type, Horizontal, 5.08 Pitch, 26~14 (AWG), Terminal Block Connector | Other | TB006-508-20BE |
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865080553014
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEE105221M035DVCTEB000; SMT V-Chip; 220 µF ± 20%; 35 V(DC); 2000 h; -55°C / +105°C; size DxL 8.0 x 10.5; Max. Iripple 570 mA @100 kHz; LC 77 µA; DF 14 % | Capacitor Al Electrolytic | 865080553014 |
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865080642006
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEC055100M050DVCTBB000; SMT V-Chip; 10 µF ± 20%; 50 V(DC); 2000 h; -55°C / +105°C; size DxL 5.0 x 5.5; Max. Iripple 95 mA @100 kHz; LC 5 µA; DF 12 % | Capacitor Al Electrolytic | 865080642006 |
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865080343008
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASED055680M016DVCTBB000; SMT V-Chip; 68 µF ± 20%; 16 V(DC); 2000 h; -55°C / +105°C; size DxL 6.3 x 5.5; Max. Iripple 230 mA @100 kHz; LC 10.88 µA; DF 16 % | Capacitor Al Electrolytic | 865080343008 |
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865080845004
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASED0774R7M100DVCTCB000; SMT V-Chip; 4.7 µF ± 20%; 100 V(DC); 2000 h; -55°C / +105°C; size DxL 6.3 x 7.7; Max. Iripple 28 mA @120 Hz; LC 4.7 µA; DF 10 % | Capacitor Al Electrolytic | 865080845004 |
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5650861-5
TE Connectivity
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1 | Body Features: Primary Product Color Gray | Configuration Features: Number of Signal Positions 64 | Number of Rows 2 | Rows Loaded A, B | PCB Mount Orientation Vertical | Number of Positions 64 | Number of Columns 32 | Contact Features: Contact Mating Area Plating Material Gold | Contact Type Socket | PCB Contact Termination Area Plating Material Tin | Contact Underplating Material Thickness 1.27 MICM | Contact Mating Area Plating Material Thickness 30 MICIN | PCB Contact Termination Area Plating Material T | Other | 5650861-5 |
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TB006-508-13BE
Same Sky
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1 | 2~24 Poles, Screw Type, Horizontal, 5.08 Pitch, 26~14 (AWG), Terminal Block Connector | Other | TB006-508-13BE |
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865080140001
Würth Elektronik
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1 | WCAP-ASLI Aluminum Electrolytic Capacitors ASEB055220M6R3DVCTAB000; SMT V-Chip; 22 µF ± 20%; 6.3 V(DC); 2000 h; -55°C / +105°C; size DxL 4.0 x 5.5; Max. Iripple 75 mA @100 kHz; LC 3 µA; DF 24 % | Capacitor Al Electrolytic | 865080140001 |
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744393665082
Würth Elektronik
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1 | WE-XHMI Performance SMT Power Inductor Size 1060; L = 8.2 µH ±20%; IR = 19.4 A; Isat = 19.5 A; RDCmax = 13 mΩ | Other | 744393665082 |
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