ISL73 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	ISL73052SEHX/SAMPLE Renesas Electronics	1	The ISL75052SEH and ISL73052SEH are radiation hardened, single output LDOs specified for an output current of 1.5A. The devices operate from an input voltage range of 4.0V to 13.2V and provide for output voltages of 0.6V to 12.7V. The output is adjustable based on a resistor divider setting. Dropout voltages as low as 75mV (at 0.5A) typical can be realized using the devices. This allows you to improve the system efficiency by lowering VIN to nearly VOUT. The ENABLE feature allows the part to be placed into	ISL73052SEHX/SAMPLE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73051ASEHVFE Renesas Electronics	1	3A, Radiation Hardened, Positive, Ultra-Low Dropout Regulator, CFP, /Tray	ISL73051ASEHVFE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73128EHVX Renesas Electronics	1	The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate. The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhance	ISL73128EHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL738845ASEHVX Renesas Electronics	1	The ISL738845ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak	ISL738845ASEHVX	3D model not available Symbol and footprint not available 0	0 Build or Request

	ISL738840ASEHD/PROTO Renesas Electronics	1	The ISL738840ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak	ISL738840ASEHD/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73096RHVF Renesas Electronics	1	The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate. The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhance	ISL73096RHVF	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73141SEHF7/PROTO Renesas Electronics	1	The ISL73141SEH is a radiation hardened, high-precision, 14-bit, 1MSPS SAR analog-to-digital converter (ADC) that features an SNR of 82.1dBFS and dissipates only 60mW when operating from a 5V supply. With a 3.3V supply, the ISL73141SEH operates at 750KSPS with a power consumption of 28mW.The product features 1MSPS throughput with no data latency and features excellent linearity and dynamic accuracy. The ISL73141SEH provides a high-speed SPI-compatible serial interface that supports logic ranging from 2.2V t	ISL73141SEHF7/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73592SEHVX Renesas Electronics	1	The ISL70591SEH, ISL73591SEH, ISL70592SEH, and ISL73592SEH are radiation hardened precision 100µA and 1mA current source ICs. The devices have excellent accuracy of ±1% over a wide operating voltage range of 3V to 40V and over a temperature range of -55 °C to +125 °C. Fabricated with the Renesas proprietary PR40 Silicon On Insulator (SOI) process, the devices are immune to single event latch-up. The high output impedance of the devices makes them insensitive to voltage drops across long lines. They can with	ISL73592SEHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73244SEHVX Renesas Electronics	1	The ISL73244SEH features two low-power amplifiers optimized to provide maximum dynamic range. These operational amplifiers (op amps) feature a unique combination of rail-to-rail operation on the input and output and a slew enhanced front end that provides ultra fast slew rates positively proportional to a given step size. These features increase accuracy under both periodic and transient conditions. The ISL73244SEH also offers low power, low offset voltage, and low temperature drift, which makes it ideal fo	ISL73244SEHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL738845ASEHF/PROTO Renesas Electronics	1	The ISL738845ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak	ISL738845ASEHF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL738845ASEHD/PROTO Renesas Electronics	1	The ISL738845ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak	ISL738845ASEHD/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73052SEHVFE Renesas Electronics	1	1.5A, Radiation Hardened, Positive, High Voltage LDO, CFP, /Tray	ISL73052SEHVFE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73592SEHF/PROTO Renesas Electronics	1	The ISL70591SEH, ISL73591SEH, ISL70592SEH, and ISL73592SEH are radiation hardened precision 100µA and 1mA current source ICs. The devices have excellent accuracy of ±1% over a wide operating voltage range of 3V to 40V and over a temperature range of -55 °C to +125 °C. Fabricated with the Renesas proprietary PR40 Silicon On Insulator (SOI) process, the devices are immune to single event latch-up. The high output impedance of the devices makes them insensitive to voltage drops across long lines. They can with	ISL73592SEHF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73128RHVX Renesas Electronics	1	The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate. The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhance	ISL73128RHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73128RHF/PROTO Renesas Electronics	1	The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate. The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhance	ISL73128RHF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request

	ISL738843ASEHVD Renesas Electronics	1	The ISL738843ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak	ISL738843ASEHVD	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73148SEHMF Renesas Electronics	1	The ISL73148SEH is a radiation hardened, high-precision, 8-Channel 14-Bit 900/480ksps SAR analog-to-digital converter (ADC) with an integrated Programmable Gain Amplifier (PGA) that features an SNR of 83dBFS and dissipates only 90mW when operating from a 5V supply.The product features 900kSPS throughput with no data latency and features excellent linearity and dynamic accuracy. The ISL73148SEH provides a high-speed SPI-compatible serial interface that supports logic ranging from 2.2V to 3.6V using a separat	ISL73148SEHMF	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73592SEHVF Intersil Corporation	1	Analog Circuit	ISL73592SEHVF	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73024SEHMX Intersil Corporation	1	Small Signal Field-Effect Transistor	ISL73024SEHMX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73127RHVF Intersil Corporation	1	RF POWER TRANSISTOR	ISL73127RHVF	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73051ASEHVFE Integrated Device Technology Inc	1	Adjustable Positive LDO Regulator	ISL73051ASEHVFE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL738841ASEHD/PROTO Renesas Electronics	1	The ISL738841ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak	ISL738841ASEHD/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73444SEHX/SAMPLE Renesas Electronics	1	The ISL73444SEH features four low-power amplifiers optimized to provide maximum dynamic range. This operational amplifier (op amps) features a unique combination of rail-to-rail operation on the input and output as well as a slew-enhanced front-end that provides ultra-fast slew rates positively proportional to a given step size, thereby increasing accuracy under transient conditions, whether it's periodic or momentary. The ISL73444SEH also offers low power, low offset voltage, and low-temperature drift, mak	ISL73444SEHX/SAMPLE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73024SEHX/SAMPLE Renesas Electronics	1	The ISL73024SEH is a 200V N-channel enhancement mode GaN power transistor. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near z	ISL73024SEHX/SAMPLE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73024SEHML Renesas Electronics	1	The ISL73024SEH is a 200V N-channel enhancement mode GaN power transistor. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near z	ISL73024SEHML	3D model available Symbol and footprint not available 1	1 Download Model
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