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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 NXP BFT92W PNP RF Bipolar Transistor, 25 mA, 15 V, 3-Pin SOT-323 SOT23 (3-Pin) BFT92W 1 Download Model
Part Image Part Image 1 Trans GP BJT NPN 2.8V 0.03A 4-Pin(3+Tab) DFP T/R Other BFU730F,115 1 Download Model
Part Image Part Image 1 NXP Semiconductors BFU580Q/MPT3///REEL 7 Q1/T1 *STANDARD MARK SMD Other BFU580Q 1 Download Model
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NE85633-T1B-A Renesas Electronics
1 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold SOT23 (3-Pin) NE85633-T1B-A 1 Download Model
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2SC4725TLP ROHM Semiconductor
1 Bipolar Transistors - BJT NPN 20V 50MA Other 2SC4725TLP 1 Download Model
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2SC1215 Panasonic
1 Silicon NPN epitaxial planer type Other 2SC1215 1 Download Model
Part Image Part Image 1 RF Transistor 2 NPN (Dual) 8V 150mA 16GHz 600mW Surface Mount 6-MCPH Other MCH6001-TL-E 1 Download Model
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HFA3134IHZ96 Renesas Electronics
1 The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8. 5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise, making them ideal for high frequency amplifier and mixer applications. Both arrays are matched high frequency transistor pairs. The matching simplifies DC bias problems and it minimizes imbalances in differential amplifier configurations. SOT23 (6-Pin) HFA3134IHZ96 1 Download Model
Part Image Part Image 1 RF Transistor NPN 12V 100mA 7GHz 150mW Surface Mount SOT-23 SOT23 (3-Pin) RF3356-TP 1 Download Model
Part Image Part Image 1 High current rating; Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ=210mΩ [IC=0.5A, IB=50mA]; Small ON-resistance (Ron) SO Transistor Flat Lead 50A02MH-TL-E 1 Download Model
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HFA3096BZ96 Renesas Electronics
1 The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while Small Outline Packages HFA3096BZ96 1 Download Model
Part Image Part Image 1 Low-noise : NF=1.0dB typ (f=1GHz); High gain (Forward Transfer Gain: 12dB typ at f=1.0GHz); High cut-off frequency : fT=7GHz typ SOT23 (3-Pin) 2SC5226A-5-TL-E 1 Download Model
Part Image Part Image 1 Low-noise use : NF = 1.2 dB (typ) [f = 1 GHz]; High cut-off frequency : fT = 16 GHz (typ) [VCE = 5 V]; High gain : |S21e|2 = 17.5 dB (typ) [f = 1 GHz]; AEC-Q101 qualified and PPAP capable; Pb-Free, Halogen Free and RoHS compliance; MCPH4 package is pin-compatible with SC-82FL SO Transistor Flat Lead NSVF4020SG4T1G 1 Download Model
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HFA3127RZ96 Renesas Electronics
1 The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while Quad Flat No-Lead HFA3127RZ96 1 Download Model
Part Image Part Image 1 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD SOT23 (3-Pin) NE68030-T1 1 Download Model
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BFS20W,115 Nexperia
1 https://www.mouser.in/datasheet/2/916/BFS20W-2937544.pdf SOT23 (3-Pin) BFS20W,115 1 Download Model
Part Image Part Image 1 RF Bipolar Transistors NPN wideband silicon RF transistor Other BFU520R 1 Download Model
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2SC1970 Mitsubishi
1 2SC1970 IS A SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR DESIGNED FOR RF Transistor Outline, Vertical 2SC1970 1 Download Model
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DSC9G02C0L Panasonic
1 DSC9G02C0L, Bipolar Transistor, NPN 15 mA 20 V HFE:65 650 MHz HF Amplifier, 3-Pin SSMini3 F3 B SO Transistor Flat Lead DSC9G02C0L 1 Download Model
Part Image Part Image 1 RF Transistor NPN 10V 15mA 10GHz 100mW Surface Mount SC-70 Other 2SC5095-R(TE85L,F) 1 Download Model
Part Image Part Image 1 Surface mount robust silicon NPN RF bipolar transistor 80mA ,250mW,-55+150 °C Other BFP540ESDE6327HTSA1 1 Download Model
Part Image Part Image 1 RF Bipolar Transistors RF BIP TRANSISTOR Other BFP620H7764XTSA1 1 Download Model
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CA3227M96 Renesas Electronics
1 Bipolar Transistors - BJT Small Outline Packages CA3227M96 1 Download Model
Part Image Part Image 1 RF Transistor NPN 10V 250mA 1.9GHz 400mW Surface Mount 4-SO Other BFG10W/X 1 Download Model
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2N4427 Central Semiconductor
1 RF Transistor NPN 20V 400mA 500MHz 1W Through Hole TO-39 Other 2N4427 1 Download Model
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