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Image Part Number D.S Description Package Category Prices / Stock Model Action
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71V124SA15TYGI8 Renesas Electronics
1 The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Other 71V124SA15TYGI8 1 Download Model
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6116SA15SOG Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Small Outline Packages 6116SA15SOG 1 Download Model
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71256SA15TPGI Renesas Electronics
1 The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Dual-In-Line Packages 71256SA15TPGI 1 Download Model
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71256SA15YGI8 Renesas Electronics
1 The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Other 71256SA15YGI8 1 Download Model
Part Image Part Image 1 243V Clamp 2.1A Ipp Tvs Diode Through Hole DO-15 Diodes, Axial Diameter Horizontal Mounting SA150CA-BP 1 Download Model
Part Image Part Image 1 Bipolar (BJT) Transistor PNP 50 V 150 mA 100MHz 200 mW Surface Mount SOT-323 SOT23 (3-Pin) 2SA1576A-R-TP 1 Download Model
Part Image Part Image 1 Small Signal Bipolar Transistors SOT23 (3-Pin) 2SA1576A-Q-TP 1 Download Model
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71256SA15PZG8 Renesas Electronics
1 The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Other 71256SA15PZG8 1 Download Model
Part Image Part Image 1 Noise suppression filter, For home appliances (conductive noise countermeasure) Other VFS5045SA151 1 Download Model
Part Image Part Image 1 500WATTS TVS 5.0 to 170 VOLTS Diodes, Axial Diameter Horizontal Mounting SA15CA-TP 1 Download Model
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71256SA15PZG Renesas Electronics
1 The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Other 71256SA15PZG 1 Download Model
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71V016SA15PHGI8 Renesas Electronics
1 The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Small Outline Packages 71V016SA15PHGI8 1 Download Model
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TXS2SA-1.5V-X Panasonic
1 High sensitivity, 50 mW operating power, 2 Form C and 1 A relays Other TXS2SA-1.5V-X 1 Download Model
Part Image Part Image 1 2,000 Vrms dielectric strength, 2 Form C and 2 A relays Other TX2SA-1.5V-1-X 1 Download Model
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71V256SA15YGI Renesas Electronics
1 The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Other 71V256SA15YGI 1 Download Model
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71V124SA15YG8 Renesas Electronics
1 The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Small Outline Packages 71V124SA15YG8 1 Download Model
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TXS2SA-1.5V-Z Panasonic
1 High sensitivity, 50 mW operating power, 2 Form C and 1 A relays Other TXS2SA-1.5V-Z 1 Download Model
Part Image Part Image 1 243V Clamp 2.1A Ipp Tvs Diode Through Hole DO-15 Diodes, Axial Diameter Horizontal Mounting SA150CA-AP 1 Download Model
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6116SA15TPG Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Dual-In-Line Packages 6116SA15TPG 1 Download Model
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TX2SA-1.5V-Z Panasonic
1 2,000 Vrms dielectric strength, 2 Form C and 2 A relays Other TX2SA-1.5V-Z 1 Download Model
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71V016SA15YGI Renesas Electronics
1 The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Other 71V016SA15YGI 1 Download Model
Part Image Part Image 1 24.4V Clamp 20.9A Ipp Tvs Diode Through Hole DO-15 Diodes, Axial Diameter Horizontal Mounting SA15CA-AP 1 Download Model
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71V256SA15PZGI Renesas Electronics
1 The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Other 71V256SA15PZGI 1 Download Model
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71V256SA15YGI8 Renesas Electronics
1 The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Other 71V256SA15YGI8 1 Download Model
Part Image Part Image 1 CAP 15F 2.7V TH Capacitor, Polarized Radial Diameter ADCR-S02R7SA156MB 1 Download Model
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