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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	ISL738840ASEHVF Renesas Electronics	1	The ISL738840ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak	ISL738840ASEHVF	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73051ASEHVX Renesas Electronics	1	The ISL75051ASEH and ISL73051ASEH are radiation hardened low-voltage, high-current, single-output LDOs specified for up to 3.0A of continuous output current. These devices operate across an input voltage range of 2.2V to 6.0V and can provide output voltages of 0.8V to 5.0V adjustable, based on the resistor divider setting. Dropout voltages as low as 65mV can be achieved using the device. The OCP pin allows the short-circuit output current limit threshold to be programmed by a resistor from the OCP pin to GN	ISL73051ASEHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73444SEHX/SAMPLE Renesas Electronics	1	The ISL73444SEH features four low-power amplifiers optimized to provide maximum dynamic range. This operational amplifier (op amps) features a unique combination of rail-to-rail operation on the input and output as well as a slew-enhanced front-end that provides ultra-fast slew rates positively proportional to a given step size, thereby increasing accuracy under transient conditions, whether it's periodic or momentary. The ISL73444SEH also offers low power, low offset voltage, and low-temperature drift, mak	ISL73444SEHX/SAMPLE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL738845ASEHVD Renesas Electronics	1	The ISL738845ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak	ISL738845ASEHVD	3D model not available Symbol and footprint not available 0	0 Build or Request

	ISL738845ASEHVF Renesas Electronics	1	The ISL738845ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak	ISL738845ASEHVF	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL738841ASEHD/PROTO Renesas Electronics	1	The ISL738841ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak	ISL738841ASEHD/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73061SEHVX Renesas Electronics	1	The ISL73061SEH is a radiation hardened single channel load switch featuring ultra-low rON and controlled rise time. This device uses a PMOS pass device as the main switch that operates across an input voltage range of 3V to 5.5V and can support a maximum of 10A continuous current. Simple ON/OFF digital control inputs make the device capable of interfacing directly with low voltage control signals from an FPGA, MCU, or processor. Additional features include reverse current protection to stop current from fl	ISL73061SEHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73024SEHML Renesas Electronics	1	The ISL73024SEH is a 200V N-channel enhancement mode GaN power transistor. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near z	ISL73024SEHML	3D model available Symbol and footprint not available 1	1 Download Model
	ISL73024SEHX/SAMPLE Renesas Electronics	1	The ISL73024SEH is a 200V N-channel enhancement mode GaN power transistor. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near z	ISL73024SEHX/SAMPLE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73023SEHX/SAMPLE Renesas Electronics	1	The ISL70023SEH and ISL73023SEH are 100V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally	ISL73023SEHX/SAMPLE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL738840ASEHVX Renesas Electronics	1	The ISL738840ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak	ISL738840ASEHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL738843ASEHX/SMPL Renesas Electronics	1	The ISL738843ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak	ISL738843ASEHX/SMPL	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73841SEHVX Renesas Electronics	1	The ISL73841SEH is a radiation tolerant, 32-channel high ESD protected multiplexer fabricated using the proprietary Renesas P6SOI (Silicon On Insulator) process technology. It operates with a dual supply voltage ranging from ±10. 8V to ±16. 5V. It has a 5-bit address plus an enable pin that can be driven with adjustable logic thresholds to conveniently select one of 32 available channels. An inactive channel is separated from an active channel by a high impedance, which inhibits any interaction between the	ISL73841SEHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL738840ASEHVF/PROTO Renesas Electronics	1	Radiation Hardened, High Performance Industry Standard Single-Ended Current Mode PWM Controller	ISL738840ASEHVF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73590SEHVX Intersil Corporation	1	Analog Circuit	ISL73590SEHVX	3D model not available Symbol and footprint not available 0	0 Build or Request

	ISL73244SEHF/SAMPLE Renesas Electronics Corporation	1	Operational Amplifier	ISL73244SEHF/SAMPLE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73024SEHML Intersil Corporation	1	Small Signal Field-Effect Transistor	ISL73024SEHML	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73051ASEHX/SAMPLE Integrated Device Technology Inc	1	Adjustable Positive LDO Regulator	ISL73051ASEHX/SAMPLE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73051ASEHVF Integrated Device Technology Inc	1	Adjustable Positive LDO Regulator	ISL73051ASEHVF	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73321SEHVF Intersil Corporation	1	Power Supply Support Circuit	ISL73321SEHVF	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL738840ASEHX/SMPLS Renesas Electronics Corporation	1	Switching Regulator/Controller	ISL738840ASEHX/SMPLS	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73592SEHVX Intersil Corporation	1	Analog Circuit	ISL73592SEHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73148SEHF/PROTO Renesas Electronics	1	The ISL73148SEH is a radiation hardened, high-precision, 8-Channel 14-Bit 900/480ksps SAR analog-to-digital converter (ADC) with an integrated Programmable Gain Amplifier (PGA) that features an SNR of 83dBFS and dissipates only 90mW when operating from a 5V supply.The product features 900kSPS throughput with no data latency and features excellent linearity and dynamic accuracy. The ISL73148SEH provides a high-speed SPI-compatible serial interface that supports logic ranging from 2.2V to 3.6V using a separat	ISL73148SEHF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73321SEHF/PROTO Renesas Electronics	1	The ISL70321SEH and ISL73321SEH are radiation hardened and SEE mitigated power supply sequencers designed to drive Point-of-Load (POL) regulators with enable pins. Up to four power supplies can be fully sequenced by a single device or multiple devices can be easily cascaded to sequence an unlimited number of power supplies for dense RF applications. This power supply sequencer requires only two feedback resistors per power supply and a single resistor to set the rising and falling delay. The device features	ISL73321SEHF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73002SEHX/SAMPLE Renesas Electronics	1	The ISL73002SEH is a radiation hardened and SEE hardened high-efficiency monolithic, synchronous buck regulator with integrated MOSFETs. This single-chip power solution operates over an input voltage range of 3V to 5.5V and provides a tightly regulated output voltage that is externally adjustable from 0.8V to ~85% of the input voltage. Output load current capability is primarily determined by PVIN voltage with up to 22A for a single IC at PVIN ≤ 5.5V for TJ ≤ +125 °C. Two ISL73002SEH devices, configured to	ISL73002SEHX/SAMPLE	3D model not available Symbol and footprint not available 0	0 Build or Request
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