Showing 25 of 230 results
Filter by Manufacturer
Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
---|
Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRMCF171TR
Infineon
|
1 | INFINEON - IRMCF171TR - Motor Controller, Sensorless, Three Phase AC, 1 Output, 3.3 V Supply, 120 MHz, 52KB Flash, LQFP-48 | Quad Flat Packages | IRMCF171TR |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY15B064Q-SXA
Infineon
|
1 | FRAM 64Kbit Serial-SPI Interface 3.3V Automotive 8-Pin SOIC N Tube | Small Outline Packages | CY15B064Q-SXA |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MB85R1002ANC-GE1
FUJITSU
|
1 | -40°C ~ 85°C FRAM (Ferroelectric RAM) Memory IC 1Mbit Parallel 150 ns 48-TSOP Surface mount | Small Outline Packages | MB85R1002ANC-GE1 |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S70KS1281DPBHI020
Infineon
|
1 | DRAM IC 128 Mb FLASH MEMORY | BGA | S70KS1281DPBHI020 |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MR0A16AVYS35
Everspin Technologies
|
1 | NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM | Small Outline Packages | MR0A16AVYS35 |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MB85RC128APNF-G-JNE1
FUJITSU
|
1 | FUJITSU - MB85RC128APNF-G-JNE1 - NVRAM, FRAM, 128 Kbit, 16K x 8bit, I2C, SOP | Small Outline Packages | MB85RC128APNF-G-JNE1 |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MR10Q010VMBR
Everspin Technologies
|
1 | NVRAM 1Mb 128Kx8 QUAD SPI MRAM -40 - +105C | BGA | MR10Q010VMBR |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MR25H10MDF
Everspin Technologies
|
1 | MRAM 1Mbit Serial-SPI 3.3V Automotive 8-Pin DFN EP Tray | Small Outline No-lead | MR25H10MDF |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
M10162040108X0PWAY
Renesas Electronics
|
1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040108X0PWAY |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
M30042040054X0ISAR
Renesas Electronics
|
1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30042040054X0ISAR |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
M30042040054X0PWAR
Renesas Electronics
|
1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30042040054X0PWAR |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
M30082040054X0PWAR
Renesas Electronics
|
1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30082040054X0PWAR |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
M30162040054X0ISAY
Renesas Electronics
|
1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040054X0ISAY |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
M30162040054X0IWAY
Renesas Electronics
|
1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30162040054X0IWAY |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
M30162040108X0PWAY
Renesas Electronics
|
1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30162040108X0PWAY |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
M10042040054X0ISAY
Renesas Electronics
|
1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10042040054X0ISAY |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
M10082040054X0ISAY
Renesas Electronics
|
1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040054X0ISAY |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
M10162040054X0ISAY
Renesas Electronics
|
1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040054X0ISAY |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DS2401-SL+T&R
Analog Devices
|
1 | Security ICs / Authentication ICs Silicon Serial Number | Other | DS2401-SL+T&R |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S71KL512SC0BHV003
Infineon
|
1 | IC FLASH RAM 512MIT PARALLEL | BGA | S71KL512SC0BHV003 |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MR5A16AMA35
Everspin Technologies
|
1 | MRAM 3.3V 32Mb MRAM with unlimited read & write endurance, currently MSL 6 | BGA | MR5A16AMA35 |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MR5A16AYS35
Everspin Technologies
|
1 | MRAM (Magnetoresistive RAM) Memory IC 32Mbit Parallel 35 ns 54-TSOP2 | Small Outline Packages | MR5A16AYS35 |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MB85RS256BPNF-G-JNERE1
FUJITSU
|
1 | FRAM FRAM 256Kb (32K x 8) SPI SOIC-8_150mil RoHS FPT-8P-M02 | Small Outline Packages | MB85RS256BPNF-G-JNERE1 |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MB85RS2MTPF-G-JNERE2
FUJITSU
|
1 | FRAM (Ferroelectric RAM) Memory IC 2Mb (256K x 8) SPI 25MHz 8-SOP | Small Outline Packages | MB85RS2MTPF-G-JNERE2 |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MR4A16BYS35
Everspin Technologies
|
1 | NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM | Small Outline Packages | MR4A16BYS35 |
3
|
Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||