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R41BR322040T0KV106
Yageo Group
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1 | R41B, Film, Metallized Polypropylene, Automotive Safety, 0.22 uF, 10%, 350VAC (Y2), 125°C, Lead Spacing = 27.5mm | Other | R41BR322040T0KV106 |
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M10042040108X0ISAR
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10042040108X0ISAR |
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MBA02040C8252FRP00
Vishay
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1 | • CECC version (IECQ-CECC approvedaccording to EN 140101-806)• Excellent overall stability: class 0.25• Wide ohmic range: 0.22 to 22 M• AEC-Q200 qualified available (1)• Radial version available for MBB/SMA 0207• Alternative termination wires available e.g. weldable wire(MBA/SMA 0204 only)• Material categorization: for definitions of complianceplease see www.vishay.com/doc?99912Note(1) AEC-Q200 qualified parts are available per tables “TemperatureCoefficient and Resistance Range”. | Resistors, Axial Diameter Horizontal Mounting | MBA02040C8252FRP00 |
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KA1-MV20405M7
Harwin
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1 | Kona: 4 Pos Plug SIL Straight 5.9mm THT Connector 8.6mm Board Mount | Other | KA1-MV20405M7 |
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M10082040108X0IWAY
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10082040108X0IWAY |
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MMA02040D1000BB300
Vishay
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1 | MELF Resistors 0.25W 100ohms 0.1% 0204 MELF 200V 25ppm | Other | MMA02040D1000BB300 |
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MMA02040C1821FB300
Vishay
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1 | MELF Resistors 0.4W 1.82Kohms 1% 0204 MELF 150V 50ppm | Other | MMA02040C1821FB300 |
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MBR2040FCT
PANJIT
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1 | Power Schottky (IF≧1A) - MBR2040FCT , Standard, 40V, 20A, ITO-220AB | Transistor Outline, Vertical | MBR2040FCT |
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M10042040108X0PSAR
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10042040108X0PSAR |
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MMA02040C1804FB300
Vishay
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1 | MELF Resistors 0.4W 1.8Mohms 1% 0204 MELF 200V 50ppm | Other | MMA02040C1804FB300 |
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M10042040054X0IWAR
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10042040054X0IWAR |
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MMA02040C4702FB300
Vishay
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1 | 47 kOhms ±1% 0.4W, 2/5W Chip Resistor MELF, 0204 Anti-Sulfur, Automotive AEC-Q200 Thin Film | Other | MMA02040C4702FB300 |
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M10082040054X0PSAY
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040054X0PSAY |
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MAX20402AFLD/VY+
Analog Devices
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1 | Automotive 36V, 2.5A/3.5A, Fully Integrated Synchronous Silent Switcher Buck Converters | Other | MAX20402AFLD/VY+ |
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R76TI22204040J
Yageo Group
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1 | R76, Film, Double Metallized Polypropylene, Automotive Grade, 0.022 uF, 5%, 650 VAC, 1600 VDC, 110°C, -55°C, 85°C, 0.03 % , 100 GOhms, 6000 V/us, 10 nH, 2.58 g, 18mm, 13.5mm, 7.5mm, Lead Spacing = 15mm, 700 | Other | R76TI22204040J |
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5023520400
Molex
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1 | DuraClik Wire-to-Board Header, Single Row, Right-Angle, 4 Circuits, Tin (Sn) Plating, Natural | Other | 5023520400 |
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5023520401
Molex
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1 | DuraClik Wire-to-Board Header, Single Row, Right-Angle, 4 Circuits, Tin (Sn) Plating, Black | Other | 5023520401 |
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MMA02040C3322FB000
Vishay
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1 | MELF Resistors 0.4W 33.2Kohms 1% 0204 200V | Other | MMA02040C3322FB000 |
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M10082040108X0PSAR
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040108X0PSAR |
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M10082040108X0ISAR
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040108X0ISAR |
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M30082040108X0ISAR
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30082040108X0ISAR |
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R41BW412040T0K
Yageo Group
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1 | R41B, Film, Metallized Polypropylene, Automotive Safety, 1.2 uF, 10%, 350VAC (Y2), 125°C, Lead Spacing = 37.5mm | Other | R41BW412040T0K |
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PI6C20400ALEX
Diodes Incorporated
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1 | Clock Buffer 1:4 PCI Express Gen 2 Zero Delay Buffer | Small Outline Packages | PI6C20400ALEX |
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M30162040054X0PSAR
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040054X0PSAR |
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MMA02040C1005FB000
Vishay
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1 | 10 MOhms ±1% 0.4W, 2/5W Chip Resistor MELF, 0204 Anti-Sulfur, Automotive AEC-Q200 Thin Film | Other | MMA02040C1005FB000 |
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