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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	74FCT245CTPGG8 Renesas Electronics	1	The 74FCT245T octal bidirectional transceiver is designed for asynchronous two way communication between data buses. The transmit/receive (T/R) input determines the direction of data flow through the bidirectional transceiver. The 74FCT245T operates at -40C to +85C. (For Mil version, see 54FCT245T)	Small Outline Packages	74FCT245CTPGG8	3D model available Symbol and footprint available 3	1 Download Model
	5962-9223803MRA Renesas Electronics	1	The 5962-92238 (equivalent to IDT 54FCT573T) is an octal transparent latch with 3-state outputs and is intended for bus oriented applications. The flip-flops appear transparent to the data when Latch Enable (LE) is high. When LE is low, the data that meets the set-up time is latched. The 5962-92238 operates at -55C to +125C. (For commercial version, see 74FCT573T)	Ceramic Dual-In-Line Packages	5962-9223803MRA	3D model not available Symbol and footprint available 2	1 Download Model
	AT25DF011-SSHN-T Renesas Electronics	1	The AT25DF011 is a member of our System Enhancing class of code and data storage solutions. It is designed for all system memory tasks ranging from boot/code shadowing to data logging and includes the 256-byte page Erase feature that enables efficient, lower energy datalogging.	Small Outline Packages	AT25DF011-SSHN-T	3D model available Symbol and footprint available 3	1 Download Model
	AT25DF256-SSHN-T Renesas Electronics	1	The AT25DF256 is a member of our System Enhancing class of code and data storage solutions. It is designed for all system memory tasks ranging from boot/code shadowing to data logging and includes the 256-byte page Erase feature that enables efficient, lower energy datalogging.	Small Outline Packages	AT25DF256-SSHN-T	3D model available Symbol and footprint available 3	1 Download Model

	AT25DN256-XMHF-B Renesas Electronics	1	The AT25DN256 is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DN256, with its page erase granularity it is ideal for data storage as well, eliminating the need for additional data storage devices.	Small Outline Packages	AT25DN256-XMHF-B	3D model available Symbol and footprint available 3	1 Download Model
	71V67703S80BQI Renesas Electronics	1	The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V67703S80BQI	3D model available Symbol and footprint available 3	1 Download Model
	71V67703S75BQ Renesas Electronics	1	The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V67703S75BQ	3D model available Symbol and footprint available 3	1 Download Model
	AT25XV041B-SSHV-B Renesas Electronics	1	The AT25XV041B is a member of our System Enhancing class of code and data storage solutions with an extended operating range up to 4.4 Volts. It is designed for all system memory tasks ranging from boot/code shadowing to data logging and includes the 256-byte page Erase feature that enables efficient, lower energy datalogging.	Small Outline Packages	AT25XV041B-SSHV-B	3D model available Symbol and footprint available 3	1 Download Model
	SLG55550V Renesas Electronics	1	The SLG55550 is a USB device that combines high speed USB switches with a USB host charger (dedicated charger) identification circuit. The device supports both the latest USB Battery Charging Specification Revision 1.1 including data contact detection and a set resistor bias for Apple compliant devices as well as legacy USB D+/D- short detection using data line pull-up.	Small Outline No-lead	SLG55550V	3D model available Symbol and footprint available 3	1 Download Model
	71V67703S85BQG8 Renesas Electronics	1	The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V67703S85BQG8	3D model available Symbol and footprint available 3	1 Download Model
	AT25DF021A-SSHNHR-T Renesas Electronics	1	The AT25DF021A is a member of our System Enhancing class of code and data storage solutions. It is designed for all system memory tasks ranging from boot/code shadowing to data logging and includes the 256-byte page Erase feature that enables efficient, lower energy datalogging.	Small Outline Packages	AT25DF021A-SSHNHR-T	3D model available Symbol and footprint available 3	1 Download Model
	71V67703S85BQGI8 Renesas Electronics	1	The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V67703S85BQGI8	3D model available Symbol and footprint available 3	1 Download Model
	54FCT245CTDB Renesas Electronics	1	The 54FCT245T octal bidirectional transceiver is designed for asynchronous two way communication between data buses. The transmit/receive (T/R) input determines the direction of data flow through the bidirectional transceiver. The 54FCT245T operates at -55C to +125C. (For commercial version, see 74FCT245T)	Ceramic Dual-In-Line Packages	54FCT245CTDB	3D model not available Symbol and footprint available 2	1 Download Model
	AT25XE081D-SHN-B Renesas Electronics	1	The AT25XE081D is a member of our System Enhancing class of code and data storage solutions designed for all system memory tasks ranging from boot/code shadowing to data logging of frequently changing data. It is universally compatible and includes extra features that save system energy and overhead.	Small Outline Packages	AT25XE081D-SHN-B	3D model available Symbol and footprint available 3	1 Download Model
	AT25DF011-XMHNHR-T Renesas Electronics	1	The AT25DF011 is a member of our System Enhancing class of code and data storage solutions. It is designed for all system memory tasks ranging from boot/code shadowing to data logging and includes the 256-byte page Erase feature that enables efficient, lower energy datalogging.	Small Outline Packages	AT25DF011-XMHNHR-T	3D model available Symbol and footprint available 3	1 Download Model

	71V67903S85BQ8 Renesas Electronics	1	The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V67903S85BQ8	3D model available Symbol and footprint available 3	1 Download Model
	71V67703S80BQGI8 Renesas Electronics	1	The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V67703S80BQGI8	3D model available Symbol and footprint available 3	1 Download Model
	AT25XE021A-XMHN-T Renesas Electronics	1	The AT25XE021A is a member of our System Enhancing class of code and data storage solutions. It is designed for all system memory tasks ranging from boot/code shadowing to data logging and includes the 256-byte page Erase feature that enables efficient, lower energy datalogging.	Small Outline Packages	AT25XE021A-XMHN-T	3D model available Symbol and footprint available 3	1 Download Model
	71V67703S80BQG8 Renesas Electronics	1	The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V67703S80BQG8	3D model available Symbol and footprint available 3	1 Download Model
	AT25DF011-XMHN-B Renesas Electronics	1	The AT25DF011 is a member of our System Enhancing class of code and data storage solutions. It is designed for all system memory tasks ranging from boot/code shadowing to data logging and includes the 256-byte page Erase feature that enables efficient, lower energy datalogging.	Small Outline Packages	AT25DF011-XMHN-B	3D model available Symbol and footprint available 3	1 Download Model
	71V67903S80BQ Renesas Electronics	1	The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V67903S80BQ	3D model available Symbol and footprint available 3	1 Download Model
	AT25DF021A-MHN-T Renesas Electronics	1	The AT25DF021A is a member of our System Enhancing class of code and data storage solutions. It is designed for all system memory tasks ranging from boot/code shadowing to data logging and includes the 256-byte page Erase feature that enables efficient, lower energy datalogging.	Small Outline No-lead	AT25DF021A-MHN-T	3D model available Symbol and footprint available 3	1 Download Model
	AT25DN256-SSHF-T Renesas Electronics	1	The AT25DN256 is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DN256, with its page erase granularity it is ideal for data storage as well, eliminating the need for additional data storage devices.	Small Outline Packages	AT25DN256-SSHF-T	3D model available Symbol and footprint available 3	1 Download Model
	AT25DN512C-XMHF-T Renesas Electronics	1	The AT25DN512C is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DN512C, with its page erase granularity it is ideal for data storage as well, eliminating the need for additional data storage devices.	Small Outline Packages	AT25DN512C-XMHF-T	3D model available Symbol and footprint available 3	1 Download Model
	74FCT3573QG Renesas Electronics	1	The 74FCT3573 octal transparent latche has 3-state outputs and is intended for bus oriented applications. When Latch Enable (LE) is high, the flip-flops appear transparent to the data and when LE is low, the data that meets the set-up time is latched. The 74FCT3573 operates at -40C to +85C	Small Outline Packages	74FCT3573QG	3D model available Symbol and footprint available 3	1 Download Model
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