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M30042040054X0PWAR
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30042040054X0PWAR |
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M30042040054X0ISAR
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30042040054X0ISAR |
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M10042040054X0ISAY
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10042040054X0ISAY |
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R5F566NDDDFC#30
Renesas Electronics
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1 | The RX66N Group microcontrollers feature flash memory that can be read with zero wait states from the CPU, delivering superior real-time performance. They are equipped with the third-generation RX CPU core, the RXv3 core, and these high-performance products operate at 120MHz. Real-time control and networking of equipment are realized with a single chip with 4MB flash memory capable of read operations at 120MHz, 1MB of SRAM and 182 general-purpose I/O ports. The device also supports high-end HMI functionalit | Quad Flat Packages | R5F566NDDDFC#30 |
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R5F566NNHDFB#30
Renesas Electronics
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1 | The RX66N Group microcontrollers feature flash memory that can be read with zero wait states from the CPU, delivering superior real-time performance. They are equipped with the third-generation RX CPU core, the RXv3 core, and these high-performance products operate at 120MHz. Real-time control and networking of equipment are realized with a single chip with 4MB flash memory capable of read operations at 120MHz, 1MB of SRAM and 182 general-purpose I/O ports. The device also supports high-end HMI functionalit | Quad Flat Packages | R5F566NNHDFB#30 |
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R5F566NNDDFB#30
Renesas Electronics
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1 | The RX66N Group microcontrollers feature flash memory that can be read with zero wait states from the CPU, delivering superior real-time performance. They are equipped with the third-generation RX CPU core, the RXv3 core, and these high-performance products operate at 120MHz. Real-time control and networking of equipment are realized with a single chip with 4MB flash memory capable of read operations at 120MHz, 1MB of SRAM and 182 general-purpose I/O ports. The device also supports high-end HMI functionalit | Quad Flat Packages | R5F566NNDDFB#30 |
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R5F572NDHDFB#30
Renesas Electronics
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1 | The RX72N Group microcontrollers are equipped with the third-generation RX CPU core, the RXv3 core, and these high-performance products operate at 240MHz. Real-time control and networking of equipment are realized with a single chip with 4MB flash memory capable of read operations at 120MHz, 1MB of SRAM and 182 general-purpose I/O ports. The device also supports high-end HMI functionality for advanced display capability. The device also has complete security capability, vital for industrial and consumer equ | Quad Flat Packages | R5F572NDHDFB#30 |
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R5F572NDDGFP#10
Renesas Electronics
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1 | The RX72N Group microcontrollers are equipped with the third-generation RX CPU core, the RXv3 core, and these high-performance products operate at 240MHz. Real-time control and networking of equipment are realized with a single chip with 4MB flash memory capable of read operations at 120MHz, 1MB of SRAM and 182 general-purpose I/O ports. The device also supports high-end HMI functionality for advanced display capability. The device also has complete security capability, vital for industrial and consumer equ | Quad Flat Packages | R5F572NDDGFP#10 |
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R5F572NDHGFB#10
Renesas Electronics
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1 | The RX72N Group microcontrollers are equipped with the third-generation RX CPU core, the RXv3 core, and these high-performance products operate at 240MHz. Real-time control and networking of equipment are realized with a single chip with 4MB flash memory capable of read operations at 120MHz, 1MB of SRAM and 182 general-purpose I/O ports. The device also supports high-end HMI functionality for advanced display capability. The device also has complete security capability, vital for industrial and consumer equ | Quad Flat Packages | R5F572NDHGFB#10 |
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R5F572NDHDFC#30
Renesas Electronics
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1 | The RX72N Group microcontrollers are equipped with the third-generation RX CPU core, the RXv3 core, and these high-performance products operate at 240MHz. Real-time control and networking of equipment are realized with a single chip with 4MB flash memory capable of read operations at 120MHz, 1MB of SRAM and 182 general-purpose I/O ports. The device also supports high-end HMI functionality for advanced display capability. The device also has complete security capability, vital for industrial and consumer equ | Quad Flat Packages | R5F572NDHDFC#30 |
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CL21B104MBCNNNC
SAMSUNG
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1 | 0.1µF ±10% 50V Ceramic Capacitor X7R 0805 (2012 Metric) | Capacitor Chip Non-polarised | CL21B104MBCNNNC |
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NC4MBV
Neutrik
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1 | XLR Connectors 4P M RECEPT B SER PCBV PN 1 GRD SEP NI | Other | NC4MBV |
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254-MB557-RO
Kobitone
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1 | Piezo Buzzers & Audio Indicators MAGNETIC TRANSDUCER | Other | 254-MB557-RO |
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TLP293-4(MBHATLE
Toshiba
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1 | Transistor Output Optocouplers 4ch Transistor opto coupler | Small Outline Packages | TLP293-4(MBHATLE |
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M30042040108X0PSAY
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30042040108X0PSAY |
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M30042040108X0ISAR
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30042040108X0ISAR |
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M10042040108X0PWAR
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10042040108X0PWAR |
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M10042040054X0PSAY
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10042040054X0PSAY |
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M10042040054X0ISAR
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10042040054X0ISAR |
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M10042040054X0PWAY
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10042040054X0PWAY |
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ESP32-C6-Zero
Waveshare
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1 | ESP32-C6 Mini Development Board, Based on ESP32-C6FH4, Dual Processors, 160MHz Running Frequency, 2.4GHz WiFi 6 & Bluetooth 5, ESP32 Development Board | Other | ESP32-C6-Zero |
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C2225C334MBRACTU
KEMET
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1 | SMD Comm X7R HV, Ceramic, 0.33 uF, 20%, 630 VDC, 945 VDC, 125°C, -55°C, X7R, SMD, MLCC, High Voltage, Temperature Stable, 2.5 % , 303 MOhms, 430 mg, 2225, 5.6mm, 6.4mm, 2mm, 0.6mm, 500, 78 Weeks, 80 | Other | C2225C334MBRACTU |
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C1825S104MBRAL7215
KEMET
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1 | SMD, MLCC, FE-CAP, Floating Electrode, High Voltage | Other | C1825S104MBRAL7215 |
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C2220S104MBRACTU
KEMET
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1 | SMD, MLCC, FE-CAP, Floating Electrode, High Voltage | Other | C2220S104MBRACTU |
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C2225Y104MBRAC7210
KEMET
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1 | SMD, MLCC, FF-CAP, Floating Electrode, High Voltage | Other | C2225Y104MBRAC7210 |
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