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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	IDT71V35761S183BQGI Renesas Electronics	1	Renesas Electronics	BGA	IDT71V35761S183BQGI	3D model available Symbol and footprint available 3	1 Download Model
	71V25761S183BGI8 Renesas Electronics	1	The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V25761S183BGI8	3D model available Symbol and footprint available 3	1 Download Model
	71V35761S183BGI Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V35761S183BGI	3D model available Symbol and footprint available 3	1 Download Model
	71V25761S183BGI Renesas Electronics	1	The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V25761S183BGI	3D model available Symbol and footprint available 3	1 Download Model

	71V35761S183BGG8 Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V35761S183BGG8	3D model available Symbol and footprint available 3	1 Download Model
	71V35761S183PFGI8 Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V35761S183PFGI8	3D model available Symbol and footprint available 3	1 Download Model
	71V25761S183PFGI Renesas Electronics	1	The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V25761S183PFGI	3D model available Symbol and footprint available 3	1 Download Model
	71V35761S183PFGI Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V35761S183PFGI	3D model available Symbol and footprint available 3	1 Download Model
	IDT71V35761S183BQG Renesas Electronics	1	Renesas Electronics	BGA	IDT71V35761S183BQG	3D model available Symbol and footprint available 3	1 Download Model
	IDT71V35761S183BQGI8 Renesas Electronics	1	Renesas Electronics	BGA	IDT71V35761S183BQGI8	3D model available Symbol and footprint available 3	1 Download Model
	IDT71V35761S183BQG8 Renesas Electronics	1	Renesas Electronics	BGA	IDT71V35761S183BQG8	3D model available Symbol and footprint available 3	1 Download Model
	71V35761S183BGGI8 Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V35761S183BGGI8	3D model available Symbol and footprint available 3	1 Download Model
	71V35761S183BG8 Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V35761S183BG8	3D model available Symbol and footprint available 3	1 Download Model
	71V25761S183PFGI8 Renesas Electronics	1	The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V25761S183PFGI8	3D model available Symbol and footprint available 3	1 Download Model
	71V35761S183BG Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V35761S183BG	3D model available Symbol and footprint available 3	1 Download Model

	71V25761S183PFG8 Renesas Electronics	1	The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V25761S183PFG8	3D model available Symbol and footprint available 3	1 Download Model
	71V35761S183BGI8 Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V35761S183BGI8	3D model available Symbol and footprint available 3	1 Download Model
	71V35761S183BGGI Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V35761S183BGGI	3D model available Symbol and footprint available 3	1 Download Model
	71V35761S183PFG8 Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V35761S183PFG8	3D model available Symbol and footprint available 3	1 Download Model
	71V35761S183PFG Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V35761S183PFG	3D model available Symbol and footprint available 3	1 Download Model
	71V35761S183BGG Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V35761S183BGG	3D model available Symbol and footprint available 3	1 Download Model
	71V25761S183BG8 Renesas Electronics	1	The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V25761S183BG8	3D model available Symbol and footprint available 3	1 Download Model
	71V25761S183PFG Renesas Electronics	1	The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V25761S183PFG	3D model available Symbol and footprint available 3	1 Download Model
	71V25761S183BG Renesas Electronics	1	The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V25761S183BG	3D model available Symbol and footprint available 3	1 Download Model
	1S1830 Toshiba America Electronic Components	1	Rectifier Diode, 1 Phase, 1 Element, 1A, 1000V V(RRM), Silicon, DO-15		1S1830	3D model not available Symbol and footprint not available 0	0 Build or Request
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