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CRCW0603576RFKEA
Vishay
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1 | RESISTOR, 0603 576 Ohms ±1% 0.1 W | Resistor Chip | CRCW0603576RFKEA |
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235-760/331-000
Wago
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1 | Stackable PCB terminal block; push-button; 1.5 mm²; Pin spacing 10/10.16 mm; 1-pole; Push-in CAGE CLAMP® | Other | 235-760/331-000 |
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IDT71V35761S183BQGI
Renesas Electronics
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1 | Renesas Electronics | BGA | IDT71V35761S183BQGI |
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71V35761SA183BG8
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA183BG8 |
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09663576613
HARTING
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1 | D-Sub THR/SMC 25pin female angled 2.84mm pitch, stamped, with board locks, 4-40UNC screw lock, PL2 | Other | 09663576613 |
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71V35761SA166BGG
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA166BGG |
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750343576
Würth Elektronik
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1 | WE-POE++ Power-over-Ethernet transformer ER19/4.8/15 SMT; | Other | 750343576 |
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71V35761S166BGGI8
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761S166BGGI8 |
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71V35761SA200BG
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA200BG |
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71V35761SA200BGG8
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA200BGG8 |
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1753576
Phoenix Contact
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1 | MSTBV 2,5/ 9-G - PCB headers, nominal cross section: 2.5 mm2, color: green, nominal current: 12 A, rated voltage (III/2): 320 V, contact surface: Sn, contact connection type: Pin, number of potentials: 9, number of rows: 1, number of positions: 9, number of connections: 9, product range: MSTBV 2,5/..-G, pitch: 5 mm, mounting: Wave soldering, pin layout: Linear pinning, solder pin [P]: 3.9 mm, number of solder pins per potential: 1, plug-in system: COMBICON MSTB 2,5, Pin connector pattern alignmen | Other | 1753576 |
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SLY403576GECO
Fischer Elektronik GmbH & Co. KG
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1 | male header | Other | SLY403576GECO |
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71V35761SA183BQG
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA183BQG |
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71V35761S183BGI
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761S183BGI |
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71V35761SA200BGGI
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA200BGGI |
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71V35761SA200BGGI8
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA200BGGI8 |
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SLY403576Z
Fischer Elektronik GmbH & Co. KG
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1 | Dual Row, Male, Angled, Pitch 2x2mm, THT, 76 Position | Other | SLY403576Z |
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71V35761S200BGGI8
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761S200BGGI8 |
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71V35761S183BGG8
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761S183BGG8 |
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71V35761S200BGI8
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761S200BGI8 |
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71V35761S183PFGI8
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V35761S183PFGI8 |
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235-762
Wago
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1 | Stackable PCB terminal block; 2.5 mm²; Pin spacing 10/10.16 mm; 1-pole; PUSH WIRE® | Other | 235-762 |
3
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235-766
Wago
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1 | Stackable PCB terminal block; 2.5 mm²; Pin spacing 10/10.16 mm; 1-pole; PUSH WIRE® | Other | 235-766 |
3
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235-769/331-000
Wago
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1 | Stackable PCB terminal block; push-button; 1.5 mm²; Pin spacing 10/10.16 mm; 1-pole; Push-in CAGE CLAMP® | Other | 235-769/331-000 |
3
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CRCW0603576RFKTA
Vishay
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1 | Thick Film Resistors - SMD 1/10watt 576ohms 1% | Resistor Chip | CRCW0603576RFKTA |
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