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71V2556S100PFGI Renesas Electronics
1 The 71V2556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2556 contains data I/O, address and control signal registers. It can provide four cycles of data for a single address presented to the SRAM. Quad Flat Packages 71V2556S100PFGI 1 Download Model
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71V25761S166PFG8 Renesas Electronics
1 The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM. Quad Flat Packages 71V25761S166PFG8 1 Download Model
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71V25761S183PFG Renesas Electronics
1 The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM. Quad Flat Packages 71V25761S183PFG 1 Download Model
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71V2556SA133BG8 Renesas Electronics
1 The 71V2556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2556 contains data I/O, address and control signal registers. It can provide four cycles of data for a single address presented to the SRAM. BGA 71V2556SA133BG8 1 Download Model
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71V256SA12YG8 Renesas Electronics
1 The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Other 71V256SA12YG8 1 Download Model
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71V256SA20PZG8 Renesas Electronics
1 The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Other 71V256SA20PZG8 1 Download Model
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71V2556SA100BGI8 Renesas Electronics
1 The 71V2556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2556 contains data I/O, address and control signal registers. It can provide four cycles of data for a single address presented to the SRAM. BGA 71V2556SA100BGI8 1 Download Model
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71V2546S150BG8 Renesas Electronics
1 The 71V2546 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2546 has an on-chip burst counter. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. BGA 71V2546S150BG8 1 Download Model
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71V2556SA133BGG Renesas Electronics
1 SRAM 3.3V 128Kx36 ZBT Sync SRAM 2.5V BGA 71V2556SA133BGG 1 Download Model
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71V2556SA133BGG8 Renesas Electronics
1 SRAM 3.3V 128Kx36 ZBT Sync SRAM 2.5V BGA 71V2556SA133BGG8 1 Download Model
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71V2556SA166BG Renesas Electronics
1 The 71V2556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2556 contains data I/O, address and control signal registers. It can provide four cycles of data for a single address presented to the SRAM. BGA 71V2556SA166BG 1 Download Model
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71V256SA12YGI Renesas Electronics
1 The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Other 71V256SA12YGI 1 Download Model
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71V2556SA100BG8 Renesas Electronics
1 The 71V2556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2556 contains data I/O, address and control signal registers. It can provide four cycles of data for a single address presented to the SRAM. BGA 71V2556SA100BG8 1 Download Model
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71V2556S150PFG8 Renesas Electronics
1 The 71V2556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2556 contains data I/O, address and control signal registers. It can provide four cycles of data for a single address presented to the SRAM. Quad Flat Packages 71V2556S150PFG8 1 Download Model
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71V25761S200BG8 Renesas Electronics
1 The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V25761S200BG8 1 Download Model
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71V2556SA100BGI Renesas Electronics
1 The 71V2556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2556 contains data I/O, address and control signal registers. It can provide four cycles of data for a single address presented to the SRAM. BGA 71V2556SA100BGI 1 Download Model
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71V25761S200PFG Renesas Electronics
1 The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM. Quad Flat Packages 71V25761S200PFG 1 Download Model
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71V2546S133BG8 Renesas Electronics
1 The 71V2546 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2546 has an on-chip burst counter. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. BGA 71V2546S133BG8 1 Download Model
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71V2546S133PFG8 Renesas Electronics
1 The 71V2546 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2546 has an on-chip burst counter. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. Quad Flat Packages 71V2546S133PFG8 1 Download Model
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71V2546S150PFG Renesas Electronics
1 The 71V2546 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2546 has an on-chip burst counter. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. Quad Flat Packages 71V2546S150PFG 1 Download Model
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71V25761S166PFGI8 Renesas Electronics
1 SRAM 4Mb PBSRAM 128K x 36 w/2.5V I/O Pipeline Quad Flat Packages 71V25761S166PFGI8 1 Download Model
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71V25761S166PFGI Renesas Electronics
1 SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM Quad Flat Packages 71V25761S166PFGI 1 Download Model
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71V2546S133PFG Renesas Electronics
1 The 71V2546 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2546 has an on-chip burst counter. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. Quad Flat Packages 71V2546S133PFG 1 Download Model
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71V2546S133BG Renesas Electronics
1 The 71V2546 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2546 has an on-chip burst counter. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. BGA 71V2546S133BG 1 Download Model
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71V256SA20PZGI8 Renesas Electronics
1 The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Other 71V256SA20PZGI8 1 Download Model
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