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71V632S6PFGI8
Renesas Electronics
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1 | The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V632S6PFGI8 |
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71V632S6PFGI
Renesas Electronics
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1 | The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V632S6PFGI |
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71V632S7PFGI8
Renesas Electronics
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1 | The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V632S7PFGI8 |
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71V632S5PFGI8
Renesas Electronics
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1 | The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V632S5PFGI8 |
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71V632S5PFGI
Renesas Electronics
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1 | The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V632S5PFGI |
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71V632S7PFG
Renesas Electronics
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1 | The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V632S7PFG |
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71V632S7PFG8
Renesas Electronics
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1 | The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V632S7PFG8 |
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71V632S7PFGI
Renesas Electronics
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1 | The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V632S7PFGI |
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71V632S6PFG8
Renesas Electronics
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1 | The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V632S6PFG8 |
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71V632S5PFG
Renesas Electronics
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1 | The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V632S5PFG |
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71V632S6PFG
Renesas Electronics
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1 | The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V632S6PFG |
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71V632S5PFG8
Renesas Electronics
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1 | The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V632S5PFG8 |
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71V632S120PF
Integrated Device Technology Inc
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1 | Standard SRAM, 64KX32, 5ns, CMOS, PQFP100 | 71V632S120PF |
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71V632S6PFI8
Integrated Device Technology Inc
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1 | Cache SRAM, 64KX32, 6ns, CMOS, PQFP100 | 71V632S6PFI8 |
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71V632ZS5PFG71V632ZS5
Integrated Device Technology Inc
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1 | Cache SRAM, PQFP100 | 71V632ZS5PFG71V632ZS5 |
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71V632S7PFGI8
Integrated Device Technology Inc
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1 | Cache SRAM, 64KX32, 7ns, CMOS, PQFP100 | 71V632S7PFGI8 |
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71V632SA4PF
Renesas Electronics Corporation
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1 | Cache SRAM, 64KX32, 4.5ns, CMOS, PQFP100 | 71V632SA4PF |
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71V632ZS7PFG
Renesas Electronics Corporation
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1 | Standard SRAM, 64KX32, 7ns, CMOS, PQFP100 | 71V632ZS7PFG |
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71V632ZS6PF
Integrated Device Technology Inc
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1 | Standard SRAM, 64KX32, 6ns, CMOS, PQFP100 | 71V632ZS6PF |
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71V632S5PF
Integrated Device Technology Inc
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1 | Cache SRAM, 64KX32, 5ns, CMOS, PQFP100 | 71V632S5PF |
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71V632ZSA4PFG
Integrated Device Technology Inc
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1 | Standard SRAM, 64KX32, 4.5ns, CMOS, PQFP100 | 71V632ZSA4PFG |
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71V632S8PFG
Integrated Device Technology Inc
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1 | Standard SRAM, 64KX32, 8ns, CMOS, PQFP100 | 71V632S8PFG |
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71V632ZSA4PFG
Renesas Electronics Corporation
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1 | Standard SRAM, 64KX32, 4.5ns, CMOS, PQFP100 | 71V632ZSA4PFG |
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71V632S6PFGI71V632S6
Integrated Device Technology Inc
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1 | Cache SRAM, PQFP100 | 71V632S6PFGI71V632S6 |
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71V632S8PF
Integrated Device Technology Inc
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1 | Standard SRAM, 64KX32, 8ns, CMOS, PQFP100 | 71V632S8PF |
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