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8403603JA
Renesas Electronics
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1 | The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Renesas Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. The pinout is the JEDEC 24 pin DIP, and 32 pad 8-bit wide standard which allows easy memory board layouts flexible to accommodate a variety of industry standard PROMs, RAMs, ROMs and EPROMs. The HM-65162/883 is ideally suited for use in microprocessor based systems with its 8-bit word length organization. | Ceramic Dual-In-Line Packages | 8403603JA |
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8403602JA
Renesas Electronics
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1 | The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Renesas Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. The pinout is the JEDEC 24 pin DIP, and 32 pad 8-bit wide standard which allows easy memory board layouts flexible to accommodate a variety of industry standard PROMs, RAMs, ROMs and EPROMs. The HM-65162/883 is ideally suited for use in microprocessor based systems with its 8-bit word length organization. | Dual-In-Line Packages | 8403602JA |
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45984-0361
Molex
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1 | 1.27mm Pitch, EXTreme LPHPower Receptacle Header with Pegs, Right-Angle, 32 Signal Contacts, Select Gold (Au) Plating, for 3.18mm Thick PC Board | Other | 45984-0361 |
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5025840360
Molex
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1 | 1.50mm Pitch, CLIK-Mate PCB Receptacle, Single Row, Surface Mount, Tin Plating, Positive Lock, with Pick-and-Place Polyimide Tape, 3 Circuits | Other | 5025840360 |
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8403606JA
Renesas Electronics
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1 | The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Renesas Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. The pinout is the JEDEC 24 pin DIP, and 32 pad 8-bit wide standard which allows easy memory board layouts flexible to accommodate a variety of industry standard PROMs, RAMs, ROMs and EPROMs. The HM-65162/883 is ideally suited for use in microprocessor based systems with its 8-bit word length organization. | Ceramic Dual-In-Line Packages | 8403606JA |
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502584-0360
Molex
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1 | Headers & Wire Housings CLIKMATE PCB RECPT 3P VT TIN PNP TAPE | Other | 502584-0360 |
3
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HCPL-7840-360E
Avago Technologies
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1 | OptoCoupler 1-CH 8-Pin PDIP SMD Tube | Dual-In-Line Packages | HCPL-7840-360E |
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5025840361
Molex
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1 | 1.50mm Pitch, CLIK-Mate PCB Receptacle, Single Row, Surface Mount, Tin Plating, Positive Lock, with Pick-and-Place Polyimide Tape, 3 Circuits | Other | 5025840361 |
2
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5025840366
Molex
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1 | 1.50mm Pitch, CLIK-Mate PCB Receptacle, Single Row, Surface Mount, Tin Plating, Positive Lock, with Pick-and-Place Polyimide Tape, 3 Circuits | Other | 5025840366 |
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HCPL-7840-360E
Avago Technologies
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1 | OptoCoupler 1-CH 8-Pin PDIP SMD Tube | Dual-In-Line Packages | HCPL-7840-360E |
3
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22-28-4036
Molex
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1 | Headers & Wire Housings 3P BREAKAWAY HEADER VERT 2.54MM | Header, Vertical | 22-28-4036 |
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45984-0362
Molex
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1 | 1.27mm Pitch, EXTreme LPHPower Receptacle Header with Pegs, Right-Angle, 32 Signal Contacts, Select Gold (Au) Plating, for 2.36mm Thick PC Board | Other | 45984-0362 |
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45984-0363
Molex
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1 | 1.27mm Pitch, EXTreme LPHPower Receptacle Header with Pegs, Right-Angle, 32 Signal Contacts, Select Gold (Au) Plating, for 1.57mm Thick PC Board | Other | 45984-0363 |
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5025840364
Molex
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1 | 1.50mm Pitch, CLIK-Mate PCB Receptacle, Single Row, Surface Mount, Tin Plating, Positive Lock, with Pick-and-Place Polyimide Tape, 3 Circuits | Other | 5025840364 |
2
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5025840362
Molex
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1 | 1.50mm Pitch, CLIK-Mate PCB Receptacle, Single Row, Surface Mount, Tin Plating, Positive Lock, with Pick-and-Place Polyimide Tape, 3 Circuits | Other | 5025840362 |
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8403609LA
Renesas Electronics
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1 | The 84036 (6116 SRAM) is organized as 2K x 8. This part offers a reduced power standby mode.The low-power version also offers a battery backup data retention capability where the circuit typically consumes only 1µW to 4µW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. | 8403609LA |
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8403609JA
Renesas Electronics
|
1 | The 84036 (6116 SRAM) is organized as 2K x 8. This part offers a reduced power standby mode.The low-power version also offers a battery backup data retention capability where the circuit typically consumes only 1µW to 4µW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. | 8403609JA |
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8403612JA
Renesas Electronics
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1 | The 84036 (6116 SRAM) is organized as 2K x 8. This part offers a reduced power standby mode.The low-power version also offers a battery backup data retention capability where the circuit typically consumes only 1µW to 4µW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. | 8403612JA |
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8403612LA
Renesas Electronics
|
1 | The 84036 (6116 SRAM) is organized as 2K x 8. This part offers a reduced power standby mode.The low-power version also offers a battery backup data retention capability where the circuit typically consumes only 1µW to 4µW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. | 8403612LA |
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8403613JA
Renesas Electronics
|
1 | The 84036 (6116 SRAM) is organized as 2K x 8. This part offers a reduced power standby mode.The low-power version also offers a battery backup data retention capability where the circuit typically consumes only 1µW to 4µW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. | 8403613JA |
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8403615LA
Renesas Electronics
|
1 | The 84036 (6116 SRAM) is organized as 2K x 8. This part offers a reduced power standby mode.The low-power version also offers a battery backup data retention capability where the circuit typically consumes only 1µW to 4µW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. | 8403615LA |
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8403611JA
Renesas Electronics
|
1 | The 84036 (6116 SRAM) is organized as 2K x 8. This part offers a reduced power standby mode.The low-power version also offers a battery backup data retention capability where the circuit typically consumes only 1µW to 4µW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. | 8403611JA |
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8403615JA
Renesas Electronics
|
1 | The 84036 (6116 SRAM) is organized as 2K x 8. This part offers a reduced power standby mode.The low-power version also offers a battery backup data retention capability where the circuit typically consumes only 1µW to 4µW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. | 8403615JA |
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8403608JA
Renesas Electronics
|
1 | The 84036 (6116 SRAM) is organized as 2K x 8. This part offers a reduced power standby mode.The low-power version also offers a battery backup data retention capability where the circuit typically consumes only 1µW to 4µW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. | 8403608JA |
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8403616LA
Renesas Electronics
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1 | The 84036 (6116 SRAM) is organized as 2K x 8. This part offers a reduced power standby mode.The low-power version also offers a battery backup data retention capability where the circuit typically consumes only 1µW to 4µW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. | 8403616LA |
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