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MMZ1005A182ET000
TDK
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1 | 1.8 kOhms @ 100MHz 1 Signal Line Ferrite Bead 0402 (1005 Metric) 200mA 2.1Ohm | Ferrite Bead Chip | MMZ1005A182ET000 |
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REG1117A-1.8
Texas Instruments
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1 | 1A,1.8V,LDO Voltage Reg.,REG1117A-1.8 Texas Instruments REG1117A-1.8, LDO Voltage Regulator, 1A, 1.8 V ±1%, 3.8 → 15 Vin, 4-Pin SOT-223 | SOT223 (3-Pin) | REG1117A-1.8 |
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MAX1792EUA18+
Analog Devices
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1 | MAX1792EUA18+, Low Dropout Voltage Regulator, Adj./Fixed 0.5A, 1.25 → 5 V, 1.8 V ±1%, 8-Pin Power μMAX | Small Outline Packages | MAX1792EUA18+ |
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06033A180FAT2A
Kyocera AVX
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT KGM15ACG1E180FT NEW GLOBAL PN 25V 18pF C A 581-KGM15ACG1E180FT | Capacitor Chip Non-polarised | 06033A180FAT2A |
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93R1A-R22-A18L
Bourns
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1 | Bourns Cermet Potentiometer 93 Series with a 6 mm Dia. Shaft 50kΩ ±10% 2W ±150ppm/°C, Linear | Other | 93R1A-R22-A18L |
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TPA180RL
STMicroelectronics
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1 | 180V Off-State 150 A Ipp TVS Thyristor DO-204AC, DO-15, Axial | Diodes, Axial Diameter Horizontal Mounting | TPA180RL |
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06033A180GAT2A
Kyocera AVX
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT KGM15ACG1E180GT NEW GLOBAL PN 25V 18pF C A 581-KGM15ACG1E180GT | Capacitor Chip Non-polarised | 06033A180GAT2A |
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TPA180
STMicroelectronics
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1 | 180V Off-State 150 A Ipp TVS Thyristor DO-204AC, DO-15, Axial | Diodes, Axial Diameter Horizontal Mounting | TPA180 |
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RMQCEA3618DGBA-182#AC0
Renesas Electronics
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1 | The RMQCEA3636DGBA is a 1, 048, 576-word by 36-bit and the RMQCEA3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp | BGA | RMQCEA3618DGBA-182#AC0 |
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RMQS2A1818DGBA-332#AC0
Renesas Electronics
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1 | The RMQS2A1836DGBA is a 524, 288-word by 36-bit and the RMQS2A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed | BGA | RMQS2A1818DGBA-332#AC0 |
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SRN8040TA-181M
Bourns
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1 | Bourns SRN8040TA Series Wire-wound SMD Inductor with a Ferrite Core, 180 µH ±20% Semi-Shielded 910mA Idc Q:10 | Inductors Precision Moulded | SRN8040TA-181M |
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0402YA180JAT2A
Kyocera AVX
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT KGM05ACG1C180JH NEW GLOBAL PN 16V 18pF C A 581-KGM05ACG1C180JH | Capacitor Chip Non-polarised | 0402YA180JAT2A |
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SRN6045TA-181M
Bourns
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1 | Bourns SRN6045TA Series Shielded Wire-wound SMD Inductor with a Ferrite Core, 180 μH ±20% Semi-Shielded 680mA Idc Q:15 | Other | SRN6045TA-181M |
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SRR4818A-180M
Bourns
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1 | 18 µH Shielded Drum Core, Wirewound Inductor 1.4 A 280mOhm Max Nonstandard | Other | SRR4818A-180M |
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RMQS3A1836DGBA-302#AC0
Renesas Electronics
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1 | The RMQS3A1836DGBA is a 524, 288-word by 36-bit and the RMQS3A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed | BGA | RMQS3A1836DGBA-302#AC0 |
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RMQS3A1818DGBA-302#AC0
Renesas Electronics
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1 | The RMQS3A1836DGBA is a 524, 288-word by 36-bit and the RMQS3A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed | BGA | RMQS3A1818DGBA-302#AC0 |
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SRP1245A-180M
Bourns
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1 | Bourns SRP1245A Series Shielded Wire-wound SMD Inductor with a Carbonyl Powder Core, 18 μH 20% 7.5A Idc | Inductors Precision Moulded | SRP1245A-180M |
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SRN5020TA-180M
Bourns
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1 | Bourns SRN5020TA Series Type SMD Shielded Wire-wound SMD Inductor with a Ferrite Core, 18 μH ±20% Semi-Shielded | Inductors Precision Moulded | SRN5020TA-180M |
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UPA1870BGR-9JG-E1-A
Renesas Electronics
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1 | The UPA1870BGR is a Nch Dual Power Mosfet 20V 6.0A 20.0Mohm Tssop8. | Small Outline Packages | UPA1870BGR-9JG-E1-A |
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0603CS-1N8XJLW
COILCRAFT
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1 | Fixed Inductors 0603CS AEC-Q200 1.8 nH 5 % 0.7 A | Other | 0603CS-1N8XJLW |
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0402YA181JAT2A
Kyocera AVX
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT KGM05ACG1C181JH NEW GLOBAL PN 16V 180pF A 581-KGM05ACG1C181JH | Capacitor Chip Non-polarised | 0402YA181JAT2A |
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ECQ-E1A183JB2
Panasonic
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1 | 0.018UF,125V.A When a breakdown occurs, the fuse of the cell is cut off by a short circuit current. The cell of the broken part becomes an open circuit, allowing the capacitor to maintain its function. | Other | ECQ-E1A183JB2 |
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SRP7030-1R8M
Bourns
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1 | 1.8 µH Shielded Inductor 8.5 A 17mOhm Max Nonstandard | Other | SRP7030-1R8M |
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UPA1873GR-9JG-E1-A
Renesas Electronics
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1 | The UPA1873GR is a Nch Dual Power Mosfet 20V 6.0A 23.0Mohm Tssop8. | Small Outline Packages | UPA1873GR-9JG-E1-A |
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PH2RA-18-UA
Adam Tech
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1 | Connector Header Through Hole, Right Angle 18 position 0.100" (2.54mm) , 3 A , -40°C ~ 105°C | Other | PH2RA-18-UA |
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