BZW50 Model Download Search Results
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BZW50-39BRL
STMicroelectronics
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1 | Peak pulse power:– 5000 W (10/1000 µs)• Stand off voltage range from 10 V to 180 V• Unidirectional and bidirectional diode• Low clamping factor• Fast response time• UL497B, file number: QVGQ2.E136224 | Diodes, Axial Diameter Horizontal Mounting | BZW50-39BRL |
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BZW50-82
STMicroelectronics
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1 | Peak pulse power:– 5000 W (10/1000 μs)– up to 60 kW (8/20 μs)• Stand-off voltage range from 12 V to 180 V• Unidirectional and bidirectional types• Operating Tj max: 175 °C• High power capability at Tj max.: up to 3700 W (10/1000 µs)• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW50-82 |
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BZW50-82B
STMicroelectronics
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1 | 5000 W, 82 V TVS in DO-15 | Diodes, Axial Diameter Horizontal Mounting | BZW50-82B |
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BZW50-22B
STMicroelectronics
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1 | ESD Suppressors / TVS Diodes 5000W 22V Bidirect | Diodes, Axial Diameter Horizontal Mounting | BZW50-22B |
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BZW50-39B
STMicroelectronics
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1 | 5000 W, 39 V TVS in DO-15 | Diodes, Axial Diameter Horizontal Mounting | BZW50-39B |
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BZW50-47B
STMicroelectronics
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1 | 5000 W, 47 V TVS in DO-15 | Diodes, Axial Diameter Horizontal Mounting | BZW50-47B |
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BZW50-100BRL
STMicroelectronics
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1 | 5000 W, 100 V TVS in DO-15 | Diodes, Axial Diameter Horizontal Mounting | BZW50-100BRL |
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BZW50-150B
STMicroelectronics
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1 | Peak pulse power:– 5000 W (10/1000 μs)– up to 60 kW (8/20 μs)• Stand-off voltage range from 12 V to 180 V• Unidirectional and bidirectional types• Operating Tj max: 175 °C• High power capability at Tj max.: up to 3700 W (10/1000 µs)• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW50-150B |
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BZW50-82RL
STMicroelectronics
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1 | UL94, V0• J-STD-020 MSL level 1• J-STD-002, JESD 22-B102 E3 and MIL-STD-750, method 2026• JESD-201 class 2 whisker test• UL 497B file number: QVGQ2.E136224• IEC 61000-4-4 level 4:– 4 k V• IEC 61000-4-2, C = 150 pF, R = 330 Ω exceeds level 4:– 30 kV (air discharge)– 30 kV (contact discharge) | Diodes, Axial Diameter Horizontal Mounting | BZW50-82RL |
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BZW50-68
STMicroelectronics
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1 | 5000 W, 68 V TVS in DO-15 | Diodes, Axial Diameter Horizontal Mounting | BZW50-68 |
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BZW50-33RL
STMicroelectronics
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1 | 5000 W, 33 V TVS in DO-15 | Diodes, Axial Diameter Horizontal Mounting | BZW50-33RL |
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BZW50-27RL
STMicroelectronics
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1 | Peak pulse power:– 5000 W (10/1000 μs)– up to 60 kW (8/20 μs)• Stand-off voltage range from 12 V to 180 V• Unidirectional and bidirectional types• Operating Tj max: 175 °C• High power capability at Tj max.: up to 3700 W (10/1000 µs)• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW50-27RL |
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BZW50-10
STMicroelectronics
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1 | • Peak pulse power:– 5000 W (10/1000 µs)• Stand off voltage range from 10 V to 180 V• Unidirectional and bidirectional diode• Low clamping factor• Fast response time• UL497B, file number: QVGQ2.E136224 | Diodes, Axial Diameter Horizontal Mounting | BZW50-10 |
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BZW50-56B
STMicroelectronics
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1 | Peak pulse power:– 5000 W (10/1000 μs)– up to 60 kW (8/20 μs)• Stand-off voltage range from 12 V to 180 V• Unidirectional and bidirectional types• Operating Tj max: 175 °C• High power capability at Tj max.: up to 3700 W (10/1000 µs)• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW50-56B |
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BZW50-100B
STMicroelectronics
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1 | 5000 W, 100 V TVS in DO-15 | Diodes, Axial Diameter Horizontal Mounting | BZW50-100B |
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BZW50-12B
STMicroelectronics
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1 | Peak pulse power:– 5000 W (10/1000 μs)– up to 60 kW (8/20 μs)• Stand-off voltage range from 12 V to 180 V• Unidirectional and bidirectional types• Operating Tj max: 175 °C• High power capability at Tj max.: up to 3700 W (10/1000 µs)• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW50-12B |
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BZW50-15B
STMicroelectronics
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1 | 5000 W, 15 V TVS in DO-15 | Diodes, Axial Diameter Horizontal Mounting | BZW50-15B |
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BZW50-15RL
STMicroelectronics
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1 | Peak pulse power:– 5000 W (10/1000 μs)– up to 60 kW (8/20 μs)• Stand-off voltage range from 12 V to 180 V• Unidirectional and bidirectional types• Operating Tj max: 175 °C• High power capability at Tj max.: up to 3700 W (10/1000 µs)• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW50-15RL |
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BZW50-27B
STMicroelectronics
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1 | • Peak pulse power:– 5000 W (10/1000 μs)– up to 60 kW (8/20 μs)• Stand-off voltage range from 12 V to 180 V• Unidirectional and bidirectional types• Operating Tj max: 175 °C• High power capability at Tj max.: up to 3700 W (10/1000 µs)• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW50-27B |
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BZW50-56
STMicroelectronics
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1 | 5000 W, 56 V TVS in DO-15 | Diodes, Axial Diameter Horizontal Mounting | BZW50-56 |
3
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BZW50-68RL
STMicroelectronics
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1 | 5 kW TVS in R6 | Diodes, Axial Diameter Horizontal Mounting | BZW50-68RL |
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BZW50-15
STMicroelectronics
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1 | Peak pulse power:– 5000 W (10/1000 μs)– up to 60 kW (8/20 μs)• Stand-off voltage range from 12 V to 180 V• Unidirectional and bidirectional types• Operating Tj max: 175 °C• High power capability at Tj max.: up to 3700 W (10/1000 µs)• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW50-15 |
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BZW50-180RL
STMicroelectronics
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1 | 5000 W, 180 V TVS in DO-15 | Diodes, Axial Diameter Horizontal Mounting | BZW50-180RL |
3
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BZW50-22
STMicroelectronics
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1 | Peak pulse power:– 5000 W (10/1000 μs)– up to 60 kW (8/20 μs)• Stand-off voltage range from 12 V to 180 V• Unidirectional and bidirectional types• Operating Tj max: 175 °C• High power capability at Tj max.: up to 3700 W (10/1000 µs)• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW50-22 |
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BZW50-33
STMicroelectronics
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1 | Peak pulse power:– 5000 W (10/1000 μs)– up to 60 kW (8/20 μs)• Stand-off voltage range from 12 V to 180 V• Unidirectional and bidirectional types• Operating Tj max: 175 °C• High power capability at Tj max.: up to 3700 W (10/1000 µs)• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW50-33 |
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