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CIGB252012AG1R0MPE
SAMSUNG
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1 | · Manufactured by state-of-the-art facilities which are entitled to the registration of ISO/IATF16949· Meet AEC-Q200 requirements· Part Type Metal Composite Power Inductor· Package Type Thin Film Type· Shielding Magnetically Shielded Type· Operation Temp. Range –-55 to +150°C (Including self generated temperature rise)· Storage Temp. Range –-55 to +150°C (After assembly)· Termination General Type a d· ROHS-Free, Halogen-Free, Beryllium-Free | Inductors Chip | CIGB252012AG1R0MPE |
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![Part Image](["https://componentsearchengine.com/2D/0T/20121956.1.1.png",null,null])
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