D4N60 Footprint, Symbol and 3D Model search results

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Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
FDD4N60NZ onsemi	1	ESD improved capability; Improved dv/dt capability; Low gate charge ( Typ. 8.3nC); RDS(on) = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.7A; RoHS compliant; 100% avalanche tested; Low Crss ( Typ. 3.7pF)	Other	FDD4N60NZ	3D model available Symbol and footprint available 3	1 Download Model
FCD4N60TM onsemi	1	RoHS compliant; 100% avalanche tested; Ultra low gate charge ( Typ. Qg = 12.8nC ); 650V @TJ = 150°C; Low effective output capacitance ( Typ. Coss.eff = 32pF ); Typ. RDS(on) = 1.0Ω	Other	FCD4N60TM	3D model available Symbol and footprint available 3	1 Download Model
D4N60L-KW-T92-K Unisonic Technologies Co Ltd	1	Small Signal Field-Effect Transistor, 0.4A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92		D4N60L-KW-T92-K	3D model not available Symbol and footprint not available 0	0 Build or Request
D4N60G-KW-AB3-R Unisonic Technologies Co Ltd	1	Small Signal Field-Effect Transistor, 0.4A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		D4N60G-KW-AB3-R	3D model not available Symbol and footprint not available 0	0 Build or Request

D4N60G-KW-T92-B Unisonic Technologies Co Ltd	1	Small Signal Field-Effect Transistor, 0.4A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92		D4N60G-KW-T92-B	3D model not available Symbol and footprint not available 0	0 Build or Request
D4N60L-KW-T92-B Unisonic Technologies Co Ltd	1	Small Signal Field-Effect Transistor, 0.4A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92		D4N60L-KW-T92-B	3D model not available Symbol and footprint not available 0	0 Build or Request
D4N60G-KW-T92-K Unisonic Technologies Co Ltd	1	Small Signal Field-Effect Transistor, 0.4A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92		D4N60G-KW-T92-K	3D model not available Symbol and footprint not available 0	0 Build or Request
D4N60L-KW-AB3-R Unisonic Technologies Co Ltd	1	Small Signal Field-Effect Transistor, 0.4A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		D4N60L-KW-AB3-R	3D model not available Symbol and footprint not available 0	0 Build or Request
MDD4N60RH MagnaChip Semiconductor Ltd	1	Power Field-Effect Transistor		MDD4N60RH	3D model not available Symbol and footprint not available 0	0 Build or Request
GSJD4N60 Suzhou Good-Ark Electronics Co Ltd	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		GSJD4N60	3D model not available Symbol and footprint not available 0	0 Build or Request
NTD4N60 Rochester Electronics LLC	1	4A, 600V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3		NTD4N60	3D model not available Symbol and footprint not available 0	0 Build or Request
FDD4N60NZ Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		FDD4N60NZ	3D model not available Symbol and footprint not available 0	0 Build or Request
MDD4N60F Microdiode Semiconductor (MDD)	1	Power Field-Effect Transistor		MDD4N60F	3D model not available Symbol and footprint not available 0	0 Build or Request
NTD4N60-1 onsemi	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		NTD4N60-1	3D model not available Symbol and footprint not available 0	0 Build or Request
NTD4N60T4 onsemi	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		NTD4N60T4	3D model not available Symbol and footprint not available 0	0 Build or Request

NTD4N60T4 Rochester Electronics LLC	1	4A, 600V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3		NTD4N60T4	3D model not available Symbol and footprint not available 0	0 Build or Request
MDD4N60D Microdiode Semiconductor (MDD)	1	Power Field-Effect Transistor		MDD4N60D	3D model not available Symbol and footprint not available 0	0 Build or Request
NTD4N60 onsemi	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		NTD4N60	3D model not available Symbol and footprint not available 0	0 Build or Request
FCD4N60TF Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.9A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FCD4N60TF	3D model not available Symbol and footprint not available 0	0 Build or Request
FCD4N60TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.9A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FCD4N60TM	3D model not available Symbol and footprint not available 0	0 Build or Request
AOD4N60 Alpha & Omega Semiconductor	1	Power Field-Effect Transistor, 4A I(D), 600V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		AOD4N60	3D model not available Symbol and footprint not available 0	0 Build or Request

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