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FCP067N65S3
onsemi
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1 | 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 78 nC); Low Effective Output Capacitance (Typ. Coss(eff.)= 715 pF); Optimized Capacitance; Typ. RDS(on) = 59 mΩ; 100% Avalanche Tested; RoHS Compliant | Transistor Outline, Vertical | FCP067N65S3 |
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FCP067N65S3
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor | FCP067N65S3 |
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