FCP190N65S3 Model Download Search Results
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FCP190N65S3
onsemi
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1 | 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 33 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF); Optimized Capacitance; Internal Gate resistance: 7.0 ohm; Typ. RDS(on) = 159 mΩ; 100% Avalanche Tested; RoHS Compliant | Transistor Outline, Vertical | FCP190N65S3 |
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FCP190N65S3R0
onsemi
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1 | Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 17 A, 190 mΩ, TO-220 | Transistor Outline, Vertical | FCP190N65S3R0 |
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![Part Image](["https://componentsearchengine.com/Images/9/FCP190N65S3R0.jpg",null,null])
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