FDB3632 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDB3632 onsemi	1	Low Miller Charge; RoHS Compliant; UIS Capability (Single Pulse and Repetitive Pulse) ; RDS(ON) = 7.5mΩ (Typ.) @ VGS = 10V, ID = 80A; QG(tot) = 84nC (Typ.) @ VGS = 10V; Low QRR Body Diode	Other	FDB3632	3D model available Symbol and footprint available 3	1 Download Model
	FDB3632 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FDB3632	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDB3632-F085 onsemi	1	Last Shipments - N-Channel PowerTrench MOSFET, 100V, 61A, 16mΩ	Other	FDB3632-F085	3D model available Symbol and footprint available 3	1 Download Model
	FDB3632_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FDB3632_NL	3D model not available Symbol and footprint not available 0	0 Build or Request

	FDB3632_F085 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FDB3632_F085	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDB3632_SB82115 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		FDB3632_SB82115	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDB3632_F085 onsemi	1	100V, 80A, 7.5mΩ, D2PAK N-Channel PowerTrench®, TO-263 2L (D2PAK), 800-TAPE REEL		FDB3632_F085	3D model not available Symbol and footprint not available 0	0 Build or Request

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