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FDB3632 - onsemi

Description: Low Miller Charge; RoHS Compliant; UIS Capability (Single Pulse and Repetitive Pulse) ; RDS(ON) = 7.5mΩ (Typ.) @ VGS = 10V, ID = 80A; QG(tot) = 84nC (Typ.) @ VGS = 10V; Low QRR Body Diode

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PCB Footprints
FDB3632 - onsemi PCB footprint - Other - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE C
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3D Models
FDB3632 - onsemi  - 3D model - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE C
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FDB3632 Details

  • Manufacturer Part Number:

    FDB3632

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    337 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.009 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    310 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDB3632 Frequently Asked Questions (FAQs)

  • The FDB3632 can operate from -40°C to 150°C, but the recommended operating temperature range is -20°C to 125°C for optimal performance.
  • The FDB3632 requires a bias voltage of 2.5V to 5.5V on the VCC pin, and the input voltage on the VIN pin should be within 1.8V to 5.5V. Additionally, a 0.1uF decoupling capacitor is recommended between VCC and GND.
  • The FDB3632 has a maximum current rating of 3A, but it's recommended to limit the current to 2A for optimal performance and reliability.
  • The FDB3632 has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures when handling the device, such as using an ESD wrist strap or mat.
  • A good PCB layout for the FDB3632 should minimize trace lengths and keep the input and output traces separate to reduce noise and EMI. A solid ground plane is also recommended.

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FDB3632 Overview

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Part Image FDB3632 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB