FDC6305N Model Download Search Results
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FDC6305N
onsemi
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1 | RDS(on) = 0.12Ω @ VGS = 2.5V ; Fast switching speed ; SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick) ; High performance trench technology for extremelylow RDS(ON) ; RDS(on) = 0.08Ω @ VGS = 4.5V ; Low gate charge (3.5nC typical) ; 2.7 A, 20 V | SOT23 (6-Pin) | FDC6305N |
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FDC6305N
Rochester Electronics LLC
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1 | 2700mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | FDC6305N |
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FDC6305N
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDC6305N |
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FDC6305N_NL
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDC6305N_NL |
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FDC6305ND87Z
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDC6305ND87Z |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sot23_6.jpg"])
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