FDC6333C Model Download Search Results
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FDC6333C
onsemi
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1 | High performance trench technology for extremely low RDS(ON); Q2 –2.0 A, 30V.; Low gate charge ; Q1 2.5 A, 30V; RDS(on) = 150 mΩ @ VGS = 4.5 V; RDS(on) = 95 mΩ@ VGS = 10 V; RDS(on) = 220 mΩ @ VGS = -4.5 V; SuperSOT –6 package: small footprint (72% smaller thanSO-8); low profile (1mm thick).; RDS(on) = 150 mΩ@ VGS = -10 V | SOT23 (6-Pin) | FDC6333C |
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FDC6333C
Rochester Electronics LLC
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1 | 2500mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | FDC6333C |
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FDC6333C
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | FDC6333C |
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FDC6333CD87Z
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | FDC6333CD87Z |
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FDC6333C_NL
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | FDC6333C_NL |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sot23_6.jpg"])
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