FDC6420C Model Download Search Results
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FDC6420C
onsemi
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1 | RDS(on) = 70 mΩ@ VGS = 4.5 V ; Q1 3.0 A, 20V ; RDS(on) = 95 mΩ @ VGS = 2.5 V ; Low gate charge ; RDS(on) = 125 mΩ@ VGS = -4.5 V ; High performance trench technology for extremely low RDS(ON) ; SuperSOT –6 package: small footprint (72% smaller thanSO-8); low profile (1mm thick). ; Q2 –2.2 A, 20V. ; RDS(on) = 190 mΩ @ VGS = -2.5 V | SOT23 (6-Pin) | FDC6420C |
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FDC6420C
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | FDC6420C |
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FDC6420C
Rochester Electronics LLC
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1 | 3000mA, 20V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | FDC6420C |
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FDC6420CD84Z
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | FDC6420CD84Z |
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FDC6420CL99Z
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | FDC6420CL99Z |
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FDC6420CS62Z
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | FDC6420CS62Z |
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FDC6420CD87Z
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | FDC6420CD87Z |
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FDC6420C_NL
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | FDC6420C_NL |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sot23_6.jpg"])
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