FDD4141 Model Download Search Results
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FDD4141
onsemi
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1 | RoHS Compliant ; High performance trench technology for extremely low RDS(on) ; Maximum RDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A ; Maximum RDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A | Other | FDD4141 |
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FDD4141
Rochester Electronics
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1 | P-Channel 40 V 10.8A (Ta), 50A (Tc) 2.4W (Ta), 69W (Tc) Surface Mount TO-252AA 12.3mOhm -55°C ~ 155°C (TJ) | Other | FDD4141 |
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FDD4141
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 50A I(D), 40V, 0.0187ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | FDD4141 |
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FDD4141-F085
onsemi
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1 | Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A; Qualified to AEC Q101; Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A; RoHS Compliant; High performance trench technology for extremely low rDS(on) | Other | FDD4141-F085 |
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FDD4141-F085BK
onsemi
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1 | Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A; Qualified to AEC Q101; Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A; RoHS Compliant; High performance trench technology for extremely low rDS(on) | Other | FDD4141-F085BK |
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FDD4141-F085P
onsemi
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1 | Power Field-Effect Transistor, 50A I(D), 40V, 0.0123ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | FDD4141-F085P |
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FDD4141_F085
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 10.8A I(D), 40V, 0.0123ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | FDD4141_F085 |
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FDD4141_F085
onsemi
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1 | -40V, -12.7A, 12.3mΩ, DPAK P-Channel PowerTrench®, TO-252 3L (DPAK), 5000-TAPE REEL | FDD4141_F085 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_3.jpg"])
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