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FDD4N60NZ
onsemi
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1 | ESD improved capability; Improved dv/dt capability; Low gate charge ( Typ. 8.3nC); RDS(on) = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.7A; RoHS compliant; 100% avalanche tested; Low Crss ( Typ. 3.7pF) | Other | FDD4N60NZ |
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FDD4N60NZ
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 3.4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | FDD4N60NZ |
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