FDD5614P Model Download Search Results
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FDD5614P
onsemi
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1 | High power and current handling capability ; –15 A, –60 V. ; RDS(ON) = 100 mΩ @ VGS = –10 V ; RDS(ON) = 130 mΩ @ VGS = –4.5 V ; High performance trench technology for extremely low RDS(ON) ; Fast switching speed | Other | FDD5614P |
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FDD5614P
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | FDD5614P |
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FDD5614P_NL
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | FDD5614P_NL |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_4.jpg"])
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