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FDD5614P - onsemi

Description: High power and current handling capability ; –15 A, –60 V. ; RDS(ON) = 100 mΩ @ VGS = –10 V ; RDS(ON) = 130 mΩ @ VGS = –4.5 V ; High performance trench technology for extremely low RDS(ON) ; Fast switching speed

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PCB Footprints
FDD5614P - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_3
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3D Models
FDD5614P - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_3
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FDD5614P Details

  • Manufacturer Part Number:

    FDD5614P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Manufacturer Package Code:

    369AS

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    45 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD5614P Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDD5614P is -55°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended bias voltage is typically around 10-15V.
  • The maximum current rating for the FDD5614P is 14A.
  • Use a voltage regulator to limit the voltage, and consider adding overcurrent protection devices such as fuses or current-limiting resistors to prevent damage from excessive current.
  • Yes, the FDD5614P is suitable for high-frequency switching applications up to 1MHz. However, ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.

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FDD5614P Overview

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Image Part Number Model
Part Image FDD5614P Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252